Abstract
Optical lithography is the dominant method of manufacturing lateral microand nanostructures in nearly all areas of technology, but it is predicted to be limited to feature sizes of about 100 nm due to diffraction. At this scale the miniaturization is not yet impaired by quantum limits of the substrates and materials used for construction, i.e. transistors will still be governed by the same physical laws as the currently available components. Therefore nanofabrication of known devices may continue beyond this border without a conceptual change of important components involved, provided suitable lithographic processes with sub 100 nm resolution are available. According to the “roadmap” published by the semiconductor industry [1] it is expected that the technological 100 nm barrier will be reached by 2005. The applicability of sub 100 nm methods for nanostructure fabrication will not only be determined by technological and physical reasons, however, but more importantly by economical factors.
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Lison, F., Haubrich, D., Meschede, D. (2001). Atom Lithography with Cesium Atomic Beams. In: Campargue, R. (eds) Atomic and Molecular Beams. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56800-8_13
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