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Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation

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  • Clusters and Nanostructures
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Abstract

SiO x H y C z nanometric layers are deposited from hexamethyldisiloxane by atmospheric pressure microwave plasma torch on Si(100) substrates submitted to temperatures varying on the range [0 °C; 120 °C]. Atomic force microscopy (AFM) characterizations of samples grown at intermediate substrate temperatures (~30 °C) demonstrate a layer-by-layer growth (Frank van der Merwe growth) leading to smooth flat and compact films while films deposited at lower and higher substrates temperatures show an island-like growth (Volmer-Weber growth) generating a high surface roughness. Concomitantly, a detailed infrared spectroscopy analysis of the growing films evidences structural modifications due to changes in the bond types, Si-O-Si conformation and stoichiometry correlated with scanning electron microscopy and AFM characterizations. Then, deposition conditions and specific microstructure are selected with the aim of generating 3-dimensional SiO x H y C z nanostructure arrays on nanoindented Si (100) templates. The first results are discussed.

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Authors and Affiliations

  1. SPCTS, ENSIL, 16 Rue Atlantis, Ester Technopole, 87068, Limoges, France

    X. Landreau, B. Lanfant, C. Dublanche-Tixier & P. Tristant

  2. SPCTS, CEC, 12 Rue Atlantis, Ester Technopole, 87068, Limoges, France

    T. Merle & E. Laborde

Authors
  1. X. Landreau
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  2. B. Lanfant
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  3. T. Merle
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  4. E. Laborde
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  5. C. Dublanche-Tixier
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  6. P. Tristant
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Correspondence to X. Landreau.

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Landreau, X., Lanfant, B., Merle, T. et al. Ordering of SiOxHyCz islands deposited by atmospheric pressure microwave plasma torch on Si(100) substrates patterned by nanoindentation . Eur. Phys. J. D 65, 421–428 (2011). https://doi.org/10.1140/epjd/e2011-20503-7

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  • DOI: https://doi.org/10.1140/epjd/e2011-20503-7

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