Abstract
The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I2 × 1/I1 × 2 decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.
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Original Russian Text © M.Yu. Esin, A.I. Nikiforov, V.A. Timofeev, A.R. Tuktamyshev, V.I. Mashanov, I.D. Loshkarev, A.S. Deryabin, O.P. Pchelyakov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 409–413.
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Esin, M.Y., Nikiforov, A.I., Timofeev, V.A. et al. Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands. Semiconductors 52, 390–393 (2018). https://doi.org/10.1134/S1063782618030107
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DOI: https://doi.org/10.1134/S1063782618030107