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Electronic and transport properties of a biased multilayer hexagonal boron nitride

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Abstract

We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E 0) required to close the band gap decreases with the increasing N and can be approximated by E 0 = 3.2 / (N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.

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Authors and Affiliations

  1. State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, No. 5 Yiheyuan Road Haidian District, Beijing, 100871, P.R. China

    K. Tang, Z. Y. Ni, Q. H. Liu, R. G. Quhe, Q. Y. Zheng, J. X. Zheng, R. X. Fei, Z. X. Gao & J. Lu

  2. Academy for Advanced Interdisciplinary Studies, Peking University, No. 5 Yiheyuan Road Haidian District, Beijing, 100871, P.R. China

    J. X. Zheng

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  1. K. Tang
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  2. Z. Y. Ni
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  3. Q. H. Liu
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  4. R. G. Quhe
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  5. Q. Y. Zheng
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  9. J. Lu
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Correspondence to K. Tang or J. Lu.

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Tang, K., Ni, Z.Y., Liu, Q.H. et al. Electronic and transport properties of a biased multilayer hexagonal boron nitride. Eur. Phys. J. B 85, 301 (2012). https://doi.org/10.1140/epjb/e2012-30236-6

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