Abstract
Thin films of YMnO3 are proposed as a new candidate for non-volatile ferroelectric memory devices. They were prepared via solutions through two different processes: thermal decomposition and reflux using yttrium acetate tetrahydrate and manganese acetate tetrahydrate as starting materials. For coatings prepared by thermal decomposition process, the starting materials were dissolved in ethanol containing diethanolamine, and single phase YMnO3 was obtained with heat-treatment at 900°C. When the starting materials were refluxed using 2-ethoxyethanol as a solvent, single phase YMnO3 was obtained with heat-treatment at 800°C. Scanning electron microscopy showed that the 300 nm thick films with a stoichiometric Y/Mn ratio had many pinholes, and a very large dielectric loss, 0.83 at 100 kHz. Inclusion of 5–10% excess of Y in the coating solution produced dense structures with improved dielectric properties. The dielectric constant and loss tangent of the thin films with Y/Mn ratio of 1.00/0.90 were about 20 and 0.05 at 100 kHz, respectively.
Similar content being viewed by others
References
N. Fujimura, T. Ishida, T. Yoshimura, and T. Ito, Appl. Phys. Lett. 69, 1011 (1996).
N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, and T. Ito, J. Appl. Phys. 80, 7084 (1996).
N. Fujimura, H. Tanaka, H. Kitahata, K. Tadanaga, T. Yoshimura, T. Ito, and T. Minami, Jpn. J. Appl. Phys. Pt. 2-Lett. 36, L1601 (1997).
H. Kitahata, K. Tadanaga, T. Minami, N. Fujimura, and T. Ito, J. Am. Ceram. Soc. 81, 1357 (1998).
G.A. Smolenskii and U.A. Bakov, J. Appl. Phys. 35, 915 (1964).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Tadanaga, K., Kitahata, H., Minami, T. et al. Preparation and Dielectric Properties of YMnO3 Ferroelectric Thin Films by the Sol-Gel Method. Journal of Sol-Gel Science and Technology 13, 903–908 (1998). https://doi.org/10.1023/A:1008675307600
Issue Date:
DOI: https://doi.org/10.1023/A:1008675307600