Article

Bulletin of Materials Science

, Volume 33, Issue 3, pp 221-226

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

  • Mahesh KumarAffiliated withMaterials Research Centre, Indian Institute of ScienceCentral Research Laboratory, Bharat Electronics
  • , T. N. BhatAffiliated withMaterials Research Centre, Indian Institute of Science
  • , M. K. RajpalkeAffiliated withMaterials Research Centre, Indian Institute of Science
  • , B. RoulAffiliated withMaterials Research Centre, Indian Institute of ScienceCentral Research Laboratory, Bharat Electronics
  • , P. MisraAffiliated withLaser Materials Processing Division, Raja Ramanna Centre for Advanced Technology
  • , L. M. KukrejaAffiliated withLaser Materials Processing Division, Raja Ramanna Centre for Advanced Technology
  • , Neeraj SinhaAffiliated withOffice of Principal Scientific Advisor, Government of India
  • , A. T. KalghatgiAffiliated withCentral Research Laboratory, Bharat Electronics
  • , S. B. KrupanidhiAffiliated withMaterials Research Centre, Indian Institute of Science Email author 

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Abstract

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

Keywords

Nitrides nano-flowers photoluminescence RF-MBE