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Modification of deposition process for Cu(In, Ga)Se2 thin film solar cells on polyimide substrate at low temperature

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Abstract

We fabricate polycrystalline Cu(In, Ga)Se2 (CIGS) film solar cells on polyimide (PI) substrate at temperature of 450 °C with single-stage process, and obtain a poor crystallization of CIGS films with several secondary phases in it. For improving it further, the two-stage process is adopted instead of the single-stage one. An extra Cu-rich CIGS layer with the thickness from 100 nm to 200 nm is grown on the substrate, and then another Cu-poor CIGS film with thickness of 1.5–2.0 μm is deposited on it. With the modification of the evaporation process, the grain size of absorber layer is increased, and the additional secondary phases almost disappear. Accordingly, the overall device performance is improved, and the conversion efficiency is enhanced by about 20%.

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Authors and Affiliations

  1. Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China

    Zhi-jun Xin  (辛治军), Xi-ming Chen  (陈希明) & Yu-ming Xue  (薛玉明)

  2. National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin, 300381, China

    Zai-xiang Qiao  (乔在祥), He Wang  (王赫) & Zhen Pan  (潘振)

  3. School of Mater. Sci. & Eng., Hebei University of Technology, Tianjin, 300130, China

    Yuan Tian  (田园)

Authors
  1. Zhi-jun Xin  (辛治军)
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  2. Xi-ming Chen  (陈希明)
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  3. Zai-xiang Qiao  (乔在祥)
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  4. He Wang  (王赫)
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  5. Yu-ming Xue  (薛玉明)
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  6. Zhen Pan  (潘振)
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  7. Yuan Tian  (田园)
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Corresponding authors

Correspondence to Zhi-jun Xin  (辛治军) or Xi-ming Chen  (陈希明).

Additional information

This work has been supported by the National High Technology Research and Development Program of China (No. 2012AA050701).

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Xin, Zj., Chen, Xm., Qiao, Zx. et al. Modification of deposition process for Cu(In, Ga)Se2 thin film solar cells on polyimide substrate at low temperature. Optoelectron. Lett. 9, 112–115 (2013). https://doi.org/10.1007/s11801-013-2340-z

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  • DOI: https://doi.org/10.1007/s11801-013-2340-z

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