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Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se2 film

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Abstract

Cu(In,Ga)Se2 (CIGS) films are deposited on the Na-free glass substrate using three-stage co-evaporation process, and the effects of thickness and growth temperature on the orientation of CIGS film are investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). When the growth of CIGS film does not experience the Cu-rich process, the increase of the growth temperature at the second stage (\(T_{s_2 } \)) promotes the (112) orientation of CIGS film, and weakens the (220) orientation. Nevertheless, when the growth of CIGS film experiences Cu-rich process, the increase of \(T_{s_2 } \) significantly promotes the (220) orientation. In addition, with the thickness of CIGS film decreasing, the extent of (In,Ga)2Se3 (IGS) precursor orientation does not change except for the intensity of Bragg peak, yet the (220) orientation of following CIGS film is hindered, which suggests that (112) plane preferentially grows at the initial growth of CIGS film.

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References

  1. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann and M. Powalla, Prog. Photovolt.: Res. Appl. 19, 894 (2011).

    Article  Google Scholar 

  2. G. Hanna, T. Glatzel, S. Sadewasser, N. Ott, H. P. Strunk, U. Rau and J. H. Werner, Appl. Phys. A: Mater. Sci. & Proc. 82, 1 (2006).

    Article  ADS  Google Scholar 

  3. N. Ott, G. Hanna, U. Rau, J. H. Werner and H. P. Strunk, J. Phys.:Condens. Matter. 16, S85 (2004).

    Article  ADS  Google Scholar 

  4. S. Chaisitsak, A. Yamada and M. Konagai, Jpn. J. Appl. Phys. 41, 507 (2002).

    Article  ADS  Google Scholar 

  5. S. H. Wei, S. B. Zhang and A. Zunger, J. Appl. Phys. 85, 7214 (1999).

    Article  ADS  Google Scholar 

  6. A. Yamada, K. Matsubara, S. Nakamura, S. Ishizuka, K. Sakurai, H. Tampo, H. Shibata, H. Nakanishi and S. Niki, Phys. Status Solidi A 203, 2639 (2006).

    Article  ADS  Google Scholar 

  7. Miguel A. Contreras, Brian Egaas, David King, Amy Swartzlander and Thorsten Dullweber, Thin Solid Films 361, 167 (2000).

    Article  ADS  Google Scholar 

  8. E. Wallin, T. Jarmar, U. Malm, M. Edoff and L. Stolt, Thin Solid Films 519, 7237 (2011).

    Article  Google Scholar 

  9. G. Hanna, J. Mattheis, V. Lapteva, Y. Yamamoto, U. Rau and H.W. Schock, Thin Solid Films 431–432, 31 (2003).

    Article  Google Scholar 

  10. A. Rockett, Thin Solid Films 480–481, 2 (2005).

    Article  Google Scholar 

  11. Xiao Hui Tan, Sheng Lin Ye, Bin Fan, Ken Tang and Xu Liu, Appl. Opt. 49, 3071 (2010).

    Article  ADS  Google Scholar 

  12. S. Ishizuka, A. Yamada, M. M. Islam, H. Shibata, P. Fons, T. Sakurai, K. Akimoto and S. Niki, J. Appl. Phys. 106, 034908 (2009).

    Article  ADS  Google Scholar 

  13. F. Couzinie-Devy, N. Barreau and J. Kessler, Prog. Photovolt.: Res. Appl. 19, 527 (2011).

    Article  Google Scholar 

  14. Bo-Yan Li, Yi Zhang, He Wang, Biao Wang, Li Wu and Yun Sun, Prog. Photovolt.: Res. Appl., 2012 (DOI:10.1002/pip.2164.).

  15. T. Mise and T. Nakada, Sol. Energy Mater. Sol. Cells 93, 1000 (2009).

    Article  Google Scholar 

  16. JIANG Wei-long, HE Qing, LIU Wei, YU Tao, LIU Fangfang, PANG Jin-bo, LI Feng-yan, LI Chang-jian and SUN Yun, Journal of Optoelectronics · Laser 21, 1657 (2010). (in Chinese)

    Google Scholar 

  17. J. E. Jaffe and A. Zunger, Phys. Rev. B 64, 241304 (2001).

    Article  ADS  Google Scholar 

  18. T. Wada, N. Kohara, T. Negami and M. Nishitani, J. Mater. Res. 12, 1456 (1997).

    Article  ADS  Google Scholar 

  19. D. Liao and A. Rockett, J. Appl. Phys. 91, 1978 (2002).

    Article  ADS  Google Scholar 

  20. D. Liao and A. Rockett, Appl. Phys. Lett. 82, 2829 (2003).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300071, China

    Bo-yan Li  (李博研), Yi Zhang  (张毅), Wei Liu  (刘玮) & Yun Sun  (孙云)

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  1. Bo-yan Li  (李博研)
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  2. Yi Zhang  (张毅)
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  3. Wei Liu  (刘玮)
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  4. Yun Sun  (孙云)
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Corresponding author

Correspondence to Yi Zhang  (张毅).

Additional information

This work has been supported by the National Natural Science Foundation of China (Nos.60906033, 50902074, 90922037, 61076061), the Natural Science Foundation of Tianjin City (No.11JCYBJC01200), and the National “863” Key Project of China (No.2004AA513020).

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Li, By., Zhang, Y., Liu, W. et al. Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se2 film. Optoelectron. Lett. 8, 348–351 (2012). https://doi.org/10.1007/s11801-012-2237-2

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  • DOI: https://doi.org/10.1007/s11801-012-2237-2

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