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The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells

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Abstract

With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is severe, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare Al2O3 by atomic layer deposition (ALD), and investigate the effect of its thickness on the performance of Cu(In,Ga)Se2 (CIGS) solar cell. The device recombination activation energy (EA) is increased from 1.04 eV to 1.11 eV when the thickness of Al2O3 is varied from 0 nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An efficiency of 11.57 % is achieved with 0.88-μm-thick CIGS absorber layer.

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Authors and Affiliations

  1. Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300071, China

    Yang Liu  (刘杨), Wei Liu  (刘玮), Si-Han Shi  (史思涵), Zhi-Chao He  (何志超), Zhi-Qiang Zhou  (周志强), Fang-Fang Liu  (刘芳芳) & Yun Sun  (孙云)

  2. Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China

    Meng-Xin Chen  (陈梦馨), Jin-Long Gong  (巩金龙) & Tuo Wang  (王拓)

  3. Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, 47907, USA

    Shu Xu  (徐术)

Authors
  1. Yang Liu  (刘杨)
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  2. Wei Liu  (刘玮)
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  3. Meng-Xin Chen  (陈梦馨)
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  4. Si-Han Shi  (史思涵)
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  5. Zhi-Chao He  (何志超)
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  6. Jin-Long Gong  (巩金龙)
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  7. Tuo Wang  (王拓)
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  8. Zhi-Qiang Zhou  (周志强)
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  9. Fang-Fang Liu  (刘芳芳)
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  10. Yun Sun  (孙云)
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  11. Shu Xu  (徐术)
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Corresponding author

Correspondence to Wei Liu  (刘玮).

Additional information

This work has been supported by the National Natural Science Foundation of China (Nos.61774089 and 61504067), and the Yang Fan Innovative & Entrepreneurial Research Team Project (No.2014YT02N037).

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Liu, Y., Liu, W., Chen, MX. et al. The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells. Optoelectron. Lett. 14, 363–366 (2018). https://doi.org/10.1007/s11801-018-8036-7

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  • DOI: https://doi.org/10.1007/s11801-018-8036-7

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