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Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases

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Abstract

Non-ozone layer destructive chlorofluorocarbon (CFC) alternatives have been initially used for laser-induced thermochemical etching of GaAs. The CFC alternatives used here are CHClF2 and C2H2F4. Respective etching rates of 188 and 160 μm/s were achieved using CHC1F2 and C2H2F4 gases. Aspect ratios of 2.5 and 1.5 were achieved with a single laser scan for CHClF2 and C2H2F4, respectively. The presence of some reaction products deposited on the etched region was dependent on three variables: laser power, scan speed, and gas pressure. Chemical compositions of the reaction products were measured by Auger electron spectroscopy.

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Author notes

  1. Cheon Lee, Se Ki Park & Won Chel Choi

    Present address: Department of Electrical Engineering, Inha University, 402-751, Inchon, Korea

Authors and Affiliations

  1. Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, 130-650, Seoul, Korea

    Moo-Sung Kim, Cheon Lee, Se Ki Park, Won Chel Choi, Eun Kyu Kim, Seong-Il Kim, Byoung Sung Ahn & Suk-Ki Min

Authors
  1. Moo-Sung Kim
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  2. Cheon Lee
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  3. Se Ki Park
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  4. Won Chel Choi
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  5. Eun Kyu Kim
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  6. Seong-Il Kim
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  7. Byoung Sung Ahn
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Kim, MS., Lee, C., Park, S.K. et al. Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases. J. Electron. Mater. 26, 436–439 (1997). https://doi.org/10.1007/s11664-997-0115-7

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  • DOI: https://doi.org/10.1007/s11664-997-0115-7

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