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Laser-induced trench etching of GaAs in aqueous KOH solution

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Abstract

Maskless etching of n-type GaAs in a KOH aqueous solution by irradiation of an argonion laser has been investigated to obtain high etching rates and aspect-ratios of etched grooves. High etching rates of up to 805 μm/s and an aspect ratio of 8 have been achieved by a single scan of a laser beam. Microprobe photoluminescence (PL), Raman scattering, and Auger electron spectroscopy (AES) measurements were carried out on the trench surface to characterize damage induced by laser wet etching.

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Authors and Affiliations

  1. Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, 560, Toyonaka, Osaka, Japan

    Cheon Lee, Mikio Takai, Toshiro Yada & Susumu Namba

  2. Glory Ltd., Shimoteno, 670, Himeji, Hyogo, Japan

    Kazuo Kato

Authors
  1. Cheon Lee
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  2. Mikio Takai
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  3. Toshiro Yada
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  4. Kazuo Kato
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  5. Susumu Namba
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Lee, C., Takai, M., Yada, T. et al. Laser-induced trench etching of GaAs in aqueous KOH solution. Appl. Phys. A 51, 340–343 (1990). https://doi.org/10.1007/BF00324316

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  • DOI: https://doi.org/10.1007/BF00324316

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