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Crystalline Morphology of SiGe Films Grown on Si(110) Substrates

  • Topical Collection: 19th Conference on Defects (DRIP XIX)
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Abstract

In past studies, significantly high hole mobility was demonstrated in (110)-oriented strained Si films. In the case of the heterostructures where (110)-oriented SiGe is used as a strain-relaxed buffer layer, the development process of defects in the SiGe layer is important for the electronic properties. A characteristic tilt is frequently found in strain-relaxed SiGe layers grown on Si(110) substrates. In this study, a strain relaxation process including twin generation is identified as the microscopic origin of the tilt. In this process, inhomogeneity in the distribution of the twin configuration is relevant to the tilt phenomenon.

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References

  1. T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, and S. Takagi, (110)-surface strained-SOI CMOS devices with higher carrier mobility, in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (Japan Soc. Applied Phys, 2003), pp. 97 –98.

  2. M. Yang, M. Ieong, L. Shi, K. Chan, V. Chan, A. Chou, E. Gusev, K. Jenkins, D. Boyd, Y. Ninomiya, D. Pendleton, Y. Surpris, D. Heenan, J. Ott, K. Guarini, C. D’Emic, M. Cobb, P. Mooney, B. To, N. Rovedo, J. Benedict, R. Mo, H. Ng, High performance CMOS fabricated on hybrid substrate with different crystal orientations, in IEEE International Electron Devices Meeting 2003 (IEEE 2003), pp. 18.7.1–18.7.4

  3. H.S. Momose, T. Ohguro, K. Kojima, S. Nakamura, and Y. Toyoshima, 1.5 nm gate oxide CMOS on [110] surface-oriented Si substrate. IEEE Trans. Electron. Devices 50, 1001 (2003).

    Article  CAS  Google Scholar 

  4. T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, S. Takagi, T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, and S. Takagi, (110)-surface strained-SOI CMOS devices. IEEE Trans. Electron Devices 52, 367 (2005).

    Article  CAS  Google Scholar 

  5. A. Teramoto, T. Hamada, M. Yamamoto, P. Gaubert, H. Akahori, K. Nii, M. Hirayama, K. Arima, K. Endo, S. Sugawa, and T. Ohmi, Very high carrier mobility for high-performance CMOS on a Si(110) surface. IEEE Trans. Electron Devices 54, 1438 (2007).

    Article  CAS  Google Scholar 

  6. M. Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, K. Uchida, and Toshinori Numata, Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport, in 2009 IEEE International Electron Devices Meeting (IEDM) (IEEE, 2009), pp. 1–4

  7. K. Arimoto, N. Utsuyama, S. Mitsui, K. Satoh, T. Yamada, J. Yamanaka, K.O. Hara, K. Sawano, and K. Nakagawa, Hole mobility enhancement observed in (110)-oriented strained Si. Jpn. J. Appl. Phys. 59, SGGK06 (2020).

    Article  CAS  Google Scholar 

  8. K. Arimoto, J. Yamanaka, K.O. Hara, K. Sawano, N. Usami, and K. Nakagawa, Engineering strain, defects, and electronic properties of (110)-oriented strained Si. ECS Trans. 98(5), 277 (2020).

    Article  CAS  Google Scholar 

  9. D. Namiuchi, A. Onogawa, T. Fujisawa, Y. Sano, D. Izumi, J. Yamanaka, K.O. Hara, K. Sawano, K. Nakagawa, and K. Arimoto, Hole mobility in strained Si/relaxed SiGe/Si(110) heterostructures studied by gated Hall measurements. Mater. Sci. Semicond. Process. 113, 105052 (2020).

    Article  CAS  Google Scholar 

  10. K. Arimoto, T. Fujisawa, D. Namiuchi, A. Onogawa, Y. Sano, D. Izumi, J. Yamanaka, K.O. Hara, K. Sawano, and K. Nakagawa, Dependences of the hole mobility in the strained Si PMOSFET and gated Hall bars formed on SiGe/Si(1 1 0) on the channel direction and the strained Si thickness. J. Cryst. Growth 571, 126246 (2021).

    Article  CAS  Google Scholar 

  11. K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K.O. Hara, N. Usami, and K. Nakagawa, Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy. Semicond. Sci. Technol. 32, 114002 (2017).

    Article  Google Scholar 

  12. K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh, and N. Usami, Determination of lattice parameters of SiGe/Si(110) heterostructures. Thin Solid Films 508, 132 (2006).

    Article  CAS  Google Scholar 

  13. K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, and K. Nakajima, Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates. J. Cryst. Growth 311, 809 (2009).

    Article  CAS  Google Scholar 

  14. K. Arimoto, A. Onogawa, S. Saito, T. Yamada, K. Sato, N. Utsuyama, Y. Sano, D. Izumi, J. Yamanaka, K.O. Hara, K. Sawano, and K. Nakagawa, Stability of strain in Si layers formed on SiGe/Si(110) heterostructures. Semicond. Sci. Technol. 33, 124016 (2018).

    Article  Google Scholar 

  15. K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki, Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures. J. Cryst. Growth 311, 819 (2009).

    Article  CAS  Google Scholar 

  16. K. Arimoto, S. Yagi, J. Yamanaka, K.O. Hara, K. Sawano, N. Usami, and K. Nakagawa, Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE. J. Cryst. Growth 468, 625 (2017).

    Article  CAS  Google Scholar 

  17. J. Yamanaka, M. Shirakura, C. Yamamoto, N. Utsuyama, K. Sato, T. Yamada, K.O. Hara, K. Arimoto, and K. Nakagawa, Surface roughness of SiGe/Si(110) formed by stress-induced twins and the solution to produce smooth surface. J. Mater. Sci. Chem. Eng. 06, 25 (2018).

    CAS  Google Scholar 

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Acknowledgments

This work was supported by JSPS KAKENHI Grant Number JP21K04900.

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Authors and Affiliations

  1. Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-Cho, Kofu, Yamanashi, 400-0021, Japan

    Keisuke Arimoto, Chihiro Sakata, Kosuke O. Hara & Junji Yamanaka

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  1. Keisuke Arimoto
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  2. Chihiro Sakata
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  3. Kosuke O. Hara
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  4. Junji Yamanaka
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Correspondence to Keisuke Arimoto.

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Arimoto, K., Sakata, C., Hara, K.O. et al. Crystalline Morphology of SiGe Films Grown on Si(110) Substrates. J. Electron. Mater. 52, 5121–5127 (2023). https://doi.org/10.1007/s11664-023-10425-7

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  • DOI: https://doi.org/10.1007/s11664-023-10425-7

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