Skip to main content
Log in

AIBA as Free Radical Initiator for Abrasive-Free Polishing of Hard Disk Substrate

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In order to optimize the existing slurry for abrasive-free polishing (AFP) of a hard disk substrate, a water-soluble free radical initiator, 2,2′-azobis (2-methylpropionamidine) dihydrochloride (AIBA) was introduced into H2O2-based slurry in the present work. Polishing experiment results with AIBA in the H2O2 slurry indicate that the material removal rate (MRR) increases and the polished surface has a lower surface roughness. The mechanism of AIBA in AFP was investigated using electron spin-resonance spectroscopy and UV–Visible analysis, which showed that the concentration of hydroxyl radical (a stronger oxidizer than H2O2) in the slurry was enhanced in the present of AIBA. The structure of the film formed on the substrate surface was investigated by scanning electron microscopy, auger electron spectroscopy and electrochemical impedance spectroscopy technology, showing that a looser and porous oxide film was found on the hard disk substrate surface when treated with the H2O2-AIBA slurry. Furthermore, potentiodynamic polarization tests show that the H2O2-AIBA slurry has a higher corrosion current density, implying that a fast dissolution reaction can occur on the substrate surface. Therefore, we can conclude that the stronger oxidation ability, loose oxide film on the substrate surface, and the higher corrosion-wear rate of the H2O2-AIBA slurry lead to the higher MRR.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Ali, S.R. Roy, and G. Shinn, Solid State Technol. 37, 63 (1994).

    Google Scholar 

  2. S.T.S. Bukkapatnam, P.K. Rao, W.C. Lih, N. Chandrasekaran, and R. Komanduri, Appl. Phys. A 88, 785 (2007).

    Article  Google Scholar 

  3. G.B. Basim, J. Electrochem. Soc. 25, 315 (2009).

    Google Scholar 

  4. H. Lei and J.B. Luo, Wear 257, 461 (2004).

    Article  Google Scholar 

  5. Z.Q. Qi and W.M. Lee, Tribol. Int. 43, 810 (2010).

    Article  Google Scholar 

  6. V.H. Nguyen, A.J. Hof, H.V. Kranenburg, P.H. Woerlee, and F. Weimar, Microelectron. Eng. 55, 305 (2001).

    Article  Google Scholar 

  7. P. van der Velden, Microelectron. Eng. 50, 41 (2000).

    Article  Google Scholar 

  8. S. Kondo, N. Sakuma, Y. Homma, Y. Goto, N. Ohashi, H. Yamaguchi, and N. Owada, J. Electrochem. Soc. 147, 3907 (2000).

    Article  Google Scholar 

  9. Y. Hayashi, K. Kikuta, and T. Kikkawa, in Proceedings of International Electron Devices Meeting (IEDM), 976 (1992).

  10. D.N. Darren, S. Jamshid, H. Masanobu, R. Chris, and P. Ara, Jpn. J. Appl. Phys. 42, 6809 (2003).

    Article  Google Scholar 

  11. M. Hanazono, J. Amanokura, and Y. Kamigata, MRS Bull. 27, 772 (2002).

    Article  Google Scholar 

  12. S. Ramakrishnan, S.V.S.B. Janjam, U.B. Patri, D. Roy, and S.V. Babu, Microelectron. Eng. 84, 80 (2007).

    Article  Google Scholar 

  13. T.H. Tsai, Y.F. Wu, and S.C. Yen, Microelectron. Eng. 77, 193 (2005).

    Article  Google Scholar 

  14. Z.J. Wang, H. Lei, W.T. Zhang, and R. Zhao, Key Eng. Mater. 562–565, 91 (2013).

    Article  Google Scholar 

  15. W.T. Zhang and H. Lei, Adv. Mater. Res. 690–693, 3209 (2013).

    Article  Google Scholar 

  16. W.T. Zhang and H. Lei, Friction 1, 359 (2013).

    Article  Google Scholar 

  17. C. Costa, V.H.S. Santos, P.H.H. Araujo, C. Sayer, A.F. Santos, C. Dariva, and M. Fortuny, J. Appl. Polym. Sci. 118, 1421 (2010).

    Article  Google Scholar 

  18. M. Hariharaputhiran, J. Zhang, S. Ramarajan, J.J. Keleher, Y.Z. Li, and S.V. Babu, J. Electrochem. Soc. 147, 3820 (2000).

    Article  Google Scholar 

  19. G. Krainev and D.J. Bigelow, J. Chem. Soc. Perkin Trans. 2, 747 (1996).

    Article  Google Scholar 

  20. J. Werber, Y.J. Wang, M. Milligan, X. Li, and J.A. Ji, J. Pharm. Sci. 100, 3307 (2011).

    Article  Google Scholar 

  21. Nakajima, E. Matsuda, Y. Masuda, H. Sameshima, and T. Ikenoue, Anal. Bioanal. Chem. 403, 1961 (2012).

    Article  Google Scholar 

  22. Nakajima, Y. Masuda, E. Matsuda, K. Tajima, H. Sameshima, and T. Ikenoue, Appl. Magn. Reson. 44, 997 (2013).

    Article  Google Scholar 

  23. Y.H. Son, W.K. Jung, Y.J. Jeon, S.K. Kim, and C.H. Lee, Eur. Food Res. Technol. 226, 473 (2008).

    Article  Google Scholar 

  24. J.F. Lu, Advanced Electron Paramagnetic Resonance Spectroscopy and its Applications (Beijing: Peking University Medical Press, 2012), p. 173.

    Google Scholar 

  25. H. Lei, Chin. J. Inorg. Chem. 25, 206 (2009).

    Google Scholar 

  26. T.H. Tsai, Y.F. Wu, and S.C. Yen, Appl. Surf. Sci. 214, 120 (2003).

    Article  Google Scholar 

  27. H.W. He, Y.H. Hu, K.Z. Zhou, and X. Xiong, J. Funct. Mater. 35, 392 (2004).

    Google Scholar 

  28. D. Guo, K. Cai, L.T. Li, and Z.L. Gui, J. Appl. Phys. 106, 054104 (2009).

    Article  Google Scholar 

  29. V.R.K. Gorantla, K.A. Assiongbon, S.V. Babu, and D. Roy, J. Electrochem. Soc. 152, G404 (2005).

    Article  Google Scholar 

  30. A.M. Fenelon and C.B. Breslin, J. Appl. Electrochem. 31, 509 (2001).

    Article  Google Scholar 

  31. J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, and D. Roy, J. Electrochem. Soc. 151, G717 (2004).

    Article  Google Scholar 

  32. A.J. Griffin, S.E. Hernandez, F.R. Brotzen, and C.F. Dunn, J. Electrochem. Soc. 141, 807 (1994).

    Article  Google Scholar 

  33. J. Li, Y.H. Liu, Y. Pan, and X.C. Lu, Appl. Surf. Sci. 293, 287 (2014).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Hong Lei.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lei, H., Ren, X. AIBA as Free Radical Initiator for Abrasive-Free Polishing of Hard Disk Substrate. J. Electron. Mater. 44, 1245–1252 (2015). https://doi.org/10.1007/s11664-015-3634-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-015-3634-7

Keywords

Navigation