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Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation

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Abstract

A systematic study of the formation of buried β-SiC structures by carbon ion implantation into Si followed by high-temperature thermal annealing has been carried out. A high fluence of carbon ions (8 × 1017 atoms/cm2) was implanted at 65 keV energy. Formation of the crystalline β-SiC phase was monitored by Fourier-transform infrared (FTIR) spectroscopy, x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) techniques. The implanted samples were annealed at 900°C and 1100°C to observe the effects of annealing temperature on the formation of crystalline β-SiC. Formation of crystalline β-SiC was clearly observed in the sample annealed at 1100°C in a flowing nitrogen environment for a period of 1 h. Graphitic carbon clusters were observed at the implanted carbon profile peak position by XPS depth profile measurements. Various structural defects such as grain boundaries were also visualized in the annealed sample by high-resolution TEM.

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References

  1. W.V. Muench and I. Pfaffeneder, J. Appl. Phys. 48, 4831 (1977).

    Article  Google Scholar 

  2. G.A. Slack, J. Appl. Phys. 35, 3460 (1964).

    Article  CAS  Google Scholar 

  3. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).

    Article  CAS  Google Scholar 

  4. J.C. Zolper and M. Skowronski, MRS Bull. 30, 273 (2005).

    Article  CAS  Google Scholar 

  5. P.G. Neudeck, J. Electron. Mater. 24, 283 (1995).

    Article  CAS  Google Scholar 

  6. M.M. Rodriguez, A.D. Cano, T.V. Torchynska, J.P. Gomez, G.G. Gasga, G. Polupan, and M. Mynbaeva, J. Mater. Sci. Mater. Electron. 19, 682 (2008).

    Article  Google Scholar 

  7. Y.H. Gao, Z. Zhang, L.S. Liao, and X.M. Bao, J. Mater. Res. 12, 1640 (1997).

    Article  CAS  Google Scholar 

  8. L.S. Liao, X.M. Bao, Z.F. Yang, and N.B. Min, Appl. Phys. Lett. 66, 2382 (1995).

    Article  CAS  Google Scholar 

  9. L. Hoffmann, G. Ziegler, D. Theis, and C. Weyrich, J. Appl. Phys. 53, 6962 (1982).

    Article  CAS  Google Scholar 

  10. D. Korobkin, Y. Urzhumov, and G. Shvets, J. Opt. Soc. Am. B 23, 468 (2006).

    Article  CAS  Google Scholar 

  11. Y. Hamakawa, T. Toyama, and H. Okamoto, J. Non-Cryst. Solids 115, 180 (1989).

    Article  CAS  Google Scholar 

  12. T.S. Jen, J.Y. Chen, N.F. Shin, J.W. Hong, and C.Y. Chang, Electron. Lett. 29, 707 (1993).

    Article  CAS  Google Scholar 

  13. I. Golecki, F. Reidinger, and J. Marti, Appl. Phys. Lett. 60, 1703 (1992).

    Article  CAS  Google Scholar 

  14. A. Fissel, B. Schröter, and W. Richter, Appl. Phys. Lett. 66, 3182 (1995).

    Article  CAS  Google Scholar 

  15. J.A. Borders, S.T. Picraux, and W. Beezhold, Appl. Phys. Lett. 18, 509 (1971).

    Article  CAS  Google Scholar 

  16. A. Nejim, P.L.F. Hemment, and J. Stoemenos, Appl. Phys. Lett. 66, 2646 (1995).

    Article  CAS  Google Scholar 

  17. J.K.N. Lindner, K. Volz, U. Preckwinkel, B. Gotz, A. Frohnwieser, B. Rauschenbach, and B. Stritzker, Mater. Chem. Phys. 46, 147 (1996).

    Article  CAS  Google Scholar 

  18. P. Martin, B. Daudin, M. Dupuy, A. Ermolieff, M. Olivier, A.M. Papon, and G. Rolland, J. Appl. Phys. 67, 2908 (1990).

    Article  CAS  Google Scholar 

  19. K.J. Reeson, P.L.F. Hemment, J. Stoemenos, J. Davis, and G.E. Celler, Appl. Phys. Lett. 51, 2242 (1987).

    Article  CAS  Google Scholar 

  20. Z.J. Zhang, H. Naramoto, A. Miyashita, B. Stritzker, and J.K.N. Lindner, Phys. Rev. B 58, 12652 (1998).

    Article  CAS  Google Scholar 

  21. Y.S. Katharria, S. Kumar, D. Kanjilal, D. Chauhan, J. Ghatak, U. Bhatta, and P.V. Satyam, J. Appl. Phys. 105, 014301 (2009).

    Article  Google Scholar 

  22. P.R. Poudel, B. Rout, D.R. Diercks, Y.M. Strzhemechny, and F.D. Mcdaniel, Appl. Phys. A. 104, 183 (2011).

    Google Scholar 

  23. P.M. Sarro, Sens. Actuators A: Phys. 82, 210 (2000).

    Article  Google Scholar 

  24. W.M. Tsang, S.P. Wong, and J.K.N. Lindner, Appl. Phys. Lett. 81, 3942 (2002).

    Article  CAS  Google Scholar 

  25. C. Serre, A. Perez-Rodriguez, A. Romano-Rodriguez, L. Calvo-Barrio, J.R. Morante, J. Esteve, M.C. Acero, W. Skorupa, and R. Kogler, J. Electrochem. Soc. 144, 2211 (1997).

    Article  CAS  Google Scholar 

  26. Z.J. Zhang, K. Narumi, H. Naramoto, S. Yamamoto, and A. Miyashita, J. Phys. D Appl. Phys. 32, 2236 (1999).

    Article  CAS  Google Scholar 

  27. D.J. Brink, J. Camassel, and J.B. Malherbe, Thin Solid Films 449, 73 (2004).

    Article  CAS  Google Scholar 

  28. J.K.N. Lindner, Appl. Phys. A 77, 27 (2003).

    Article  CAS  Google Scholar 

  29. R. Middleton, A Negative Ion Cookbook, HTML Version: M. Wiplich, http://tvdg10.phy.bnl.gov/COOKBook (1989).

  30. P.R. Poudel, L.J. Mitchell, E.B. Smith, L.C. Phinney, K. Hossain, L.R. Burns, D.L. Weathers, J.L. Duggan, and F.D. McDaniel, Nucl. Instrum. Methods B261, 627 (2007).

    Google Scholar 

  31. Z. An, R.K.Y. Fu, P. Chen, W. Liu, P.K. Chu, and C. Lin, J. Vac. Sci. Technol. B 21, 1375 (2003).

    Article  CAS  Google Scholar 

  32. JCPDS Data Card 74-2307 1998 (Swarthmore, PA: International Centre of Diffraction Data).

  33. J.P. Biersack and L.G. Haggmark, Nucl. Instrum. Methods B 174, 257 (1980) (Recently updated, the package and its documentation are available at http://www.srim.org).

  34. L. Calcagno, G. Compagnini, G. Foti, M.G. Grimaldi, and P. Musumeci, Nucl. Instrum. Methods B 120, 121 (1996).

    Article  CAS  Google Scholar 

  35. L. Wang, Y.E. Zhao, Dhiu Chen, and S.P. Wong, Nucl. Instrum. Methods B 227, 282 (2005).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, 1115 Union Circle # 311427, Denton, TX, 76203, USA

    P. R. Poudel, B. Rout & F. D. Mcdaniel

  2. Department of Metallurgical and Materials Engineering, Colorado School of Mines, 1500 Illinois St., Golden, CO, 80401, USA

    D. R. Diercks

  3. Department of Physics and Astronomy, Texas Christian University, Fort Worth, TX, 76129, USA

    J. A. Paramo & Y. M. Strzhemechny

Authors
  1. P. R. Poudel
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  2. B. Rout
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  3. D. R. Diercks
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  4. J. A. Paramo
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  5. Y. M. Strzhemechny
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  6. F. D. Mcdaniel
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Correspondence to P. R. Poudel.

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Poudel, P.R., Rout, B., Diercks, D.R. et al. Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation. J. Electron. Mater. 40, 1998–2003 (2011). https://doi.org/10.1007/s11664-011-1695-9

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  • DOI: https://doi.org/10.1007/s11664-011-1695-9

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