Abstract
This paper presents the results of porous SiC characterizations using photoluminescence, scanning electronic microscopy and X-ray diffraction techniques. It is shown that the intensity of defect-related PL bands (2.13 and 2.54 eV) increases monotonically with PSiC thickness rise from 2.0 up to 12.0 μm. These luminescence centers are assigned to surface defects which appear at the PSiC etching process. Intensity enhancement for exciton-related PL bands (2.84, 3.04 and 3.24 eV ) is attributed to the exciton recombination rate increasing as result of electron-hole confinement realization in big size SiC NCs (6H-PSiC with inclusions of 15R- and 4H-PSiC) and/or quantum confinement exciton recombination in small-size 4H-PSiC NCs.
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Acknowledgement
The work was supported by SIP-IPN, Mexico. Authors would like to thank Dr. S. Ostapenko from University of South Florida for low temperature (4.2 K) PL measurements.
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This paper (AM W0215102) was presented on 14-th Semiconducting and Insulating Materials Conferences (SIMC-2007), Arkansas, USA, May 15-20, 2007.
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Morales Rodriguez, M., Díaz Cano, A., Torchynska, T.V. et al. Optical and structural properties of SiC nanocrystals. J Mater Sci: Mater Electron 19, 682–686 (2008). https://doi.org/10.1007/s10854-007-9379-1
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DOI: https://doi.org/10.1007/s10854-007-9379-1