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n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications

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Abstract

High quality n-(CdMgTe:I/n-CdTe:I)/(p-CdTe:N/p-ZnCdTe:N/p-ZnTe:N)/p-GaAs heterojunction diodes have been fabricated by molecular beam epitaxial growth. The illumination effect on the complex impedance and conductivity of heterostructure diode was investigated. The illumination intensities were taken up to the 200 mW/cm2 with frequency range of 42 Hz to 1 MHz. The observed real and imaginary parts of the complex impedance were strongly dependent on the illumination frequency. The inverse relation was observed between the illumination intensity and the complex impedance. The relaxation mechanism of the diode was analyzed by the Cole–Cole plots. The radius of the Cole–Cole curve decreases with increasing illumination intensity. This suggests a mechanism of illumination dependent on the relaxation process. It is also found that the conductivity increases linearly with increasing the illumination intensity. We can conclude that the new design heterostructure diode in our work is a good candidate in photodetector and optoelectronic applications.

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Acknowledgments

The project was financially supported by King Saud University, Vice Deanship of Research Chairs.

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Authors and Affiliations

  1. Nano-Science and Semiconductor Laboratories, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt

    I. S. Yahia

  2. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia

    I. S. Yahia & S. AlFaify

  3. Physics Department, Faculty of Science, AL Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia

    M. M. Abutalib

  4. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow, 32/46, 02-668, Warsaw, Poland

    S. Chusnutdinow, T. Wojtowicz & G. Karczewski

  5. Department of Physics, Faculty of Science, Firat University, 23169, Elazig, Turkey

    F. Yakuphanoglu

  6. Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh, 11451, Saudi Arabia

    A. Al-Bassam, A. M. El-Naggar & S. M. El-Bashir

  7. Department of Physics, Faculty of Science, Benha University, Banha, Egypt

    S. M. El-Bashir

Authors
  1. I. S. Yahia
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  2. S. AlFaify
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  3. M. M. Abutalib
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  4. S. Chusnutdinow
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  5. T. Wojtowicz
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  6. G. Karczewski
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  7. F. Yakuphanoglu
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  8. A. Al-Bassam
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  9. A. M. El-Naggar
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  10. S. M. El-Bashir
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Correspondence to I. S. Yahia.

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Yahia, I.S., AlFaify, S., Abutalib, M.M. et al. n-(CdMgTe/CdTe)/(p-(CdTe/ZnCdTe/ZnTe)/p-GaAs heterostructure diode for photosensor applications. Appl. Phys. A 122, 491 (2016). https://doi.org/10.1007/s00339-016-0007-x

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  • DOI: https://doi.org/10.1007/s00339-016-0007-x

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