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Photoimpedance spectroscopy of ZnTe/ZnMnTe heterojunction for photodetector devices using Cole–Cole diagrams and relaxation time process

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Abstract

In this work, the heterojunction ZnTe/ZnMnTe/GaAs has been fabricated using the molecular beam epitaxially (MBE) technique. The electric complex impedance has been used to characterize the as-prepared junction at different illumination powers in a wide range of frequencies. It was found that the impedance of the studied junction has the highest value at the darkest point and then decreases with the increase in the applied frequency, illumination power, or both of them. The Cole–Cole diagram showed two relaxation processes for the studied junction for illumination power larger than 10 mWcm−2. Only one relaxation process has been observed for illumination powers greater than 10 mWcm−2. The dielectric relaxation time showed an increase with the increase of the illumination power. Accordingly, the prepared heterojunction can be suggested for use as a photo-sensor and/or photo-switch applications.

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Data availability

The data supporting this study's findings are available from the corresponding author upon reasonable request.

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Acknowledgements

The Research Center for Advanced Materials Science (RCAMS)” at King Khalid University, Saudi Arabia, for funding this work under the grant number RCAMS/KKU/017-22.

Funding

The Research Center for Advanced Materials Science (RCAMS)” at King Khalid University, Saudi Arabia, for funding this work under the grant number RCAMS/KKU/017-22.

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Authors and Affiliations

  1. Pharaohs-Higher Institute for Computer, Information Systems, and Management, Giza, Egypt

    Hosam M. Gomaa

  2. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia

    Rashida Jafer

  3. Laboratory of Nano-Smart Materials for Science and Technology (LNSMST), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia

    I. S. Yahia & H. Y. Zahran

  4. Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    I. S. Yahia & H. Y. Zahran

  5. Center of Medical and Bio-Allied Health Sciences Research (CMBHSR), Ajman University, Ajman , P.O. Box 346, United Arab Emirates

    I. S. Yahia

  6. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow, 32/46, 02-668, Warsaw, Poland

    S. Chusnutdino & G. Karczewski

Authors
  1. Hosam M. Gomaa
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  2. Rashida Jafer
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  3. I. S. Yahia
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  4. H. Y. Zahran
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  5. S. Chusnutdino
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  6. G. Karczewski
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Contributions

The first author, (Hosam M Gomaa), plotted all figures and performed all calculations, analyzed, and explained the measured data, wrote the final manuscript, and responded to reviewers' comments. While the other authors suggested the research point, fabricated the junction device, reviewed the final manuscript, and performed and funded the experimental measurements (equally).

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Correspondence to Hosam M. Gomaa.

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Gomaa, H.M., Jafer, R., Yahia, I.S. et al. Photoimpedance spectroscopy of ZnTe/ZnMnTe heterojunction for photodetector devices using Cole–Cole diagrams and relaxation time process. Opt Quant Electron 55, 333 (2023). https://doi.org/10.1007/s11082-023-04643-w

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