Abstract
Molecular beam epitaxy was applied to evaporate a set of Au/ZnTe:I/CdTe:I/GaAs/In heterostructures. The resulted heterostructures were examined for photovoltaic energy conversion application. Electrical characteristics were studied for understanding the relevant electrical transport mechanisms. The current–voltage (I–V) characteristics were checked under dark and light conditions. Ideality factor indicates the recombination mechanisms in the designed device; its value equals (3.22). Under various light intensities (1–140 mW cm−2), the I–V curves are affected highly by reverse voltage bias. The open-circuit voltage increases exponentially with the illumination and its values of this device increased with increasing light intensity (L), where 55 mV at 1 mW cm−2 and 465 mV at 140 mW cm−2. Electrical as well as power related parameters of the designed device were interpreted. Photosensitivity and Responsitivity of the studied device showed a high photoresponse under different light intensities. Au/ZnTe:I/CdTe:I/GaAs/In heterostructures is a promising material for photosensor and optoelectronic applications.
Similar content being viewed by others
References
D. Jiang, T. Wang, Q. Xu, D. Li, S. Meng, M. Chen, Perovskite oxide ultrathin nanosheets/g-C3N4 2D-2D heterojunction photocatalysts with significantly enhanced photocatalytic activity towards the photodegradation of tetracycline. Appl. Catal. B 201, 617–628 (2017)
P. Umadevi, N. Prithivikumaran, Electrical parameters of metal-doped n-CdO/p-Si heterojunction diodes. Phys. B: Condensed Matter 501, 123–128 (2016)
I.S. Yahia, A.A.M. Farag, R. Jafer, J. Iqbal, H.Y. Zahran, S. Chusnutdinow, T. Wojtowicz, G. Karczewski, Electrical, photovoltaic and photosensitivity characteristics of p-ZnTe:N/CdTe:Mg/n-CdTe:I/GaAs for photodiode applications. Mater. Sci. Semicond. Process. 67, 33–40 (2017)
A. Onno, J. Wu, Q. Jiang, S. Chen, M. Tang, Y. Maidaniuk, M. Benamara et al., Al0. 2Ga0. 8As solar cells monolithically grown on Si and GaAs by MBE for III-V/Si tandem dual-junction applications. Energy Proc. 92, 661–668 (2016)
A.A. Al-Ghamdi, M.S. Abd El-sadek, A.T. Nagat, F. El-Tantawy, Synthesis, electrical properties and transport mechanisms of thermally vacuum evaporated CdTe nanocrystalline thin films. Solid State Commun. 152(17), 1644–1649 (2012)
S. Mecabih, K. Benguerine, N. Benosman, B. Abbar, B. Bouhafs, Generalized gradient calculations of magneto-electronic properties for diluted magnetic semiconductors ZnMnS and ZnMnSe. Phys. B: Condensed Matter 403(19–20), 3452–3458 (2008)
M. Prakasam, O. Viraphong, L. Teulé-Gay, R. Decourt, P. Veber, E.G. Víllora, K. Shimamura, Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluride. J. Cryst. Growth 318(1), 533–538 (2011)
P. Su, C. Lee, G.-C. Wang, T.-M. Lu, I.B. Bhat, CdTe/ZnTe/GaAs heterostructures for single-crystal CdTe solar cells. J. Electron. Mater. 43(8), 2895–2900 (2014)
I.E. Cortes-Mestizo, E. Briones, C.M. Yee-Rendón, L. Zamora Peredo, L.I. Espinosa-Vega, R. Droopad, V.H. Méndez-García, Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE. J. Cryst. Growth 477, 59–64 (2017)
F. Gerhard, T. Naydenova, M. Baussenwein, C. Schumacher, C. Gould, L.W. Molenkamp, Growth and characterization of epitaxial NiMnSb/ZnTe/NiMnSb magnetic multilayers. J. Cryst. Growth 435, 46–49 (2016)
K. Abderrafi, R. Ribeiro-Andrade, N. Nicoara, M.F. Cerqueira, M. GonzalezDebs, H. Limborço, P.M.P. Salomé et al., Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy. J. Cryst. Growth 475, 300–306 (2017)
L.-C. Tung, G. Karczewski, Y.J. Wang, Unusual magneto-infrared modes in CdMnTe/CdMgTe quantum well structures. Phys. E: Low-Dimens. Syst. Nanostruct. 40(5), 1608–1610 (2008)
V. Kolkovsky, Ph. D thesis, Planar Nanostructures Made of Diluted Magnetic Semiconductors Epitaxial Growth and Transport Properties, Institute of Physics Polish Academy of Science, Warsaw, Poland, 2008, p. 10
D. Zhang, Y. Liao, J. Li, T. Wen, L. Jin, X. Wang, J. Kolodzey, Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE. J. Alloys Compd. 684, 643–648 (2016)
I. Jum’h, M.S. Abd El-Sadek, H. Al-Taani, I.S. Yahia, G. Karczewski, Influence of illumination on the electrical properties of p-(ZnMgTe/ZnTe: N)/CdTe/n-(CdTe: I)/GaAs heterojunction grown by molecular beam epitaxy (MBE). J. Electron. Mater. 46(2), 1061–1066 (2017)
I.S. Yahia, G.B. Sakr, T. Wojtowicz, G. Karczewski. p-ZnTe/n-CdMnTe/n-GaAs diluted magnetic diode for photovoltaic applications. Semicond. Sci. Technol. 25(9), 095001 (2010)
E. Hökelek, G.Y. Robinson, A comparison of Pd Schottky contacts on InP, GaAs and Si. Solid-State Electron. 24(2), 99–103 (1981)
E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, vol. 2 (Clarendon Press, Oxford, 1988), p. 35
Ş Altındal, S. Karadeniz, N. Tuğluoğlu, A. Tataroğlu, The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes. Solid-State Electronics 47(10), 1847–1854 (2003)
M. Soylu, A.A. Al-Ghamdi, O.A. Al-Hartomy, F. El-Tantawy, F. Yakuphanoglu, The electrical characterization of ZnO/GaAs heterojunction diode. Phys. E: Low-Dimens. Syst. Nanostruct. 64, 240–245 (2014)
O. Azim, I.S. Yahia, G.B. Sakr, Characterization of mono-crystalline silicon solar cell. Appl. Solar Energy 50(3), 146–155 (2014)
E. Cuculescu, I. Evtodiev, E. Arama, M. Caraman, Optical and photoelectrical characteristics of GaSe (Cu)/oxide semiconductor heterojunction. Moldavian J. Phys. Sci. 7(1), 55–60 (2008)
A.A.M. Farag, I.S. Yahia, T. Wojtowicz, G. Karczewski, Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy. J. Phys. D: Appl. Phys. 43(21), 215102 (2010)
K.S. Bindra, N. Suri, R. Thangaraj, Transient photoconductivity in amorphous Se70Sb20Ag10 thin films. J. Non-Cryst. Solids 353(13–15), 1446–1449 (2007)
A.A.M. Farag, I.S. Yahia, E.G. El-Metwally, Influence of temperature, thickness and intensity of illumination on the capacitance-voltage and current-voltage characteristics of coplanar ZnTe thin films. J. Adv. Mater. 11(2), 204–212 (2009)
F. Yakuphanoglu, Photovoltaic properties of the organic–inorganic photodiode based on polymer and fullerene blend for optical sensors. Sensors Actuators A: Physical 141(2), 383–389 (2008)
A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience Publishers, New York, 1963)
I.S. Yahia, F. Yakuphanoglu, S. Chusnutdinow, T. Wojtowicz, G. Karczewski, Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode. Curr. Appl. Phys. 13(3), 537–543 (2013)
D.P. Amalnerkar, Photoconducting and allied properties of CdS thick films. Mater. Chem, Phys 60(1), 1–21 (1999)
L.C. Chen, M.-I. Lu, Magneto-optical multiplication effects in ZnO/SiO2/Si photodiodes. Script. Mater. 61(8), 781–784 (2009)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Wasly, H.S., Abd El-sadek, M.S., Karczewski, G. et al. Design and microelectronic analysis of Au/ZnTe:I/CdTe:I/GaAs/In photosensor for optoelectronic applications using MBE technology. J Mater Sci: Mater Electron 30, 4936–4942 (2019). https://doi.org/10.1007/s10854-019-00790-7
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-00790-7