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Band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface investigated by X-ray photoemission spectroscopy

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Abstract

The band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface is investigated by X-ray photoemission spectroscopy. In2S3 is thermally evaporated onto the contamination-free polycrystalline Cu2ZnSnS4 surface prepared by magnetron sputtering. The valence band offset is measured to be 0.46 ± 0.1 eV, which matches well with the valance band offset value 0.49 eV calculated using “transitivity” method. The conduction band offset is determined to be 0.82 ± 0.1 eV, indicating a ‘type I’ band alignment at the heterojunction interface.

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Acknowledgments

This work was supported by the National Nature Sciences Funding of China (61076063, 61306120, and 61340051) and Fujian Provincial Department of Science and Technology, China (2012J01266).

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Authors and Affiliations

  1. Institute of Micro/Nano Devices and Solar Cells, College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China

    Lingyan Lin, Jinling Yu, Shuying Cheng, Peimin Lu, Yunfeng Lai, Sile Lin & Pengyi Zhao

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  1. Lingyan Lin
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  2. Jinling Yu
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  3. Shuying Cheng
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Correspondence to Jinling Yu.

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Lin, L., Yu, J., Cheng, S. et al. Band alignment at the In2S3/Cu2ZnSnS4 heterojunction interface investigated by X-ray photoemission spectroscopy. Appl. Phys. A 116, 2173–2177 (2014). https://doi.org/10.1007/s00339-014-8431-2

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  • DOI: https://doi.org/10.1007/s00339-014-8431-2

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