Skip to main content
SpringerLink
Log in

Band alignment of In2Se3 multilayers/ZnO heterojunction measured by X-ray photoelectron spectroscopy

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

X-ray photoelectron spectroscopy has been used to measure the band alignment the In2Se3 multilayers (MLs)/ZnO heterojunction. The MLs In2Se3 was fabricated by pulse laser deposition (PLD) on ZnO/Al2O3 substrates. The valence-band offset (ΔEv) of In2Se3 MLs/ZnO is determined to be 2.19 ± 0.1 eV, and the conduction-band offset (ΔEc) is deduced to be 0.96 ± 0.1 eV, indicating that In2Se3-MLs/ZnO heterojunction has a type-II band alignment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. S. Yang, C. Wang, C. Ataca, Y. Li, H. Chen, H. Cai, A. Suslu, J.C. Grossman, C. Jiang, Q. Liu, Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS2 p–n vdW heterostructure. ACS Appl. Mater. Interfaces 8, 2533–2539 (2016)

    Article  Google Scholar 

  2. Z. Zheng, T. Zhang, J. Yao, Y. Zhang, J. Xu, G. Yang, Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices. Nanotechnology 27, 225501 (2016)

    Article  Google Scholar 

  3. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D.W.H. Fam, A.I.Y. Tok, Q. Zhang, H. Zhang, Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 8, 63–67 (2012)

    Article  Google Scholar 

  4. H. Liu, P.D. Ye, M.O.S.F.E.T. Dual-Gate, With atomic-layer-deposited as top-gate dielectric. IEEE Electron Dev. Lett. 33, 546–548 (2012)

    Article  Google Scholar 

  5. N. Balakrishnan, C.R. Staddon, E.F. Smith, J. Stec, D. Gay, G.W. Mudd, O. Makarovsky, Z.R. Kudrynskyi, Z.D. Kovalyuk, L. Eaves, Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport. 2D Mater. 3, 025030 (2016)

    Article  Google Scholar 

  6. M. Mahjouri-Samani, R. Gresback, M. Tian, K. Wang, A.A. Puretzky, C.M. Rouleau, G. Eres, I.N. Ivanov, K. Xiao, M.A. McGuire, Pulsed laser deposition of photoresponsive two-dimensional GaSe nanosheet networks. Adv. Func. Mater. 24, 6365–6371 (2014)

    Article  Google Scholar 

  7. X. Yu, S. Zhang, H. Zeng, Q.J. Wang, Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector. Nano Energy 25, 34–41 (2016)

    Article  Google Scholar 

  8. S. Chen, X.M. Liu, X.S. Qiao, X. Wan, K. Shehzad, X.H. Zhang, Y. Xu, X.P. Fan, Facile synthesis of γ-In2Se3 nanoflowers toward high performance self-powered broadband γ-In2Se3/Si heterojunction photodiode. Small 13, 1604033 (2017)

    Article  Google Scholar 

  9. R. Sreekumar, R. Jayakrishnan, C.S. Kartha, K.P. Vijayakumar, Y. Kashibawa, T. Abe, Different phases of indium selenide prepared by annealing In/Se bilayer at various temperatures: characterization studies. Solar Energy Mater. Solar Cells 90, 2908–2917 (2006)

    Article  Google Scholar 

  10. X.H. Sun, B. Yu, G. Ng, T.D. Nguyen, M. Meyyappan, III-VI compound semiconductor indium selenide (In2Se3) nanowires: synthesis and characterization. Appl. Phys. Lett. 89, 233121 (2006)

    Article  Google Scholar 

  11. Y. Zou, Z.-G. Chen, Y. Huang, L. Yang, J. Drennan, J. Zou, Anisotropic electrical properties from vapor–solid–solid grown Bi2Se3 nanoribbons and nanowires. J. Phys. Chem. C 118, 20620–20626 (2014)

    Article  Google Scholar 

  12. M. Lin, D. Wu, Y. Zhou, W. Huang, W. Jiang, W. Zheng, S. Zhao, C. Jin, Y. Guo, H. Peng, Controlled growth of atomically thin In2Se3 flakes by van der Waals epitaxy. J. Am. Chem. Soc. 135, 13274–13277 (2013)

    Article  Google Scholar 

  13. H. Peng, D.T. Schoen, S. Meister, X.F. Zhang, Y. Cui, Synthesis and phase transformation of In2Se3 and CuInSe2 nanowires. J. Am. Chem. Soc. 129, 34–35 (2007)

    Article  Google Scholar 

  14. M. McCluskey, S. Jokela, Defects in ZnO. J. Appl. Phys. 106, 10 (2009)

    Article  Google Scholar 

  15. S. Su, H. Zhu, L. Zhang, M. He, L. Zhao, S. Yu, J. Wang, F. Ling, Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure. Appl. Phys. Lett. 103, 131104 (2013)

    Article  Google Scholar 

  16. Z. Tang, G.K. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films. Appl. Phys. Lett. 72, 3270–3272 (1998)

    Article  Google Scholar 

  17. M. Morsli, C. Amory, A. Bougrine, L. Cattin, J. Bernède, Current–voltage (I–V) studies of Mo/γ-In2Se3/ZnO: Al diode structures. J. Phys. D. 40, 7675 (2007)

    Article  Google Scholar 

  18. Z. Zheng, J. Yao, J. Xiao, G. Yang, Synergistic effect of hybrid multilayer In2Se3 and nanodiamonds for highly sensitive photodetectors. ACS Appl. Mater. Interfaces. 8, 20200–20211 (2016)

    Article  Google Scholar 

  19. Z. Wang, S. Su, F.C.-C. Ling, W. Anwand, A. Wagner, Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition. J. Appl. Phys. 116, 033508 (2014)

    Article  Google Scholar 

  20. A. Pfitzner, H. Lutz, Redetermination of the crystal structure of γ-In2Se3 by twin crystal X-ray method. J. Solid State Chem. 124, 305–308 (1996)

    Article  Google Scholar 

  21. J. Waldrop, R. Grant, Measurement of AlN/GaN (0001) heterojunction band offsets by X-ray photoemission spectroscopy. Appl. Phys. Lett. 68, 2879–2881 (1996)

    Article  Google Scholar 

  22. L.W.-W. Fang, J.-S. Pan, R. Zhao, L. Shi, T.-C. Chong, G. Samudra, Y.-C. Yeo, Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials. Appl. Phys. Lett. 92, 032107 (2008)

    Article  Google Scholar 

  23. E. Yu, E. Croke, D. Chow, D. Collins, M. Phillips, T. McGill, J. McCaldin, R. Miles, Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100). J. Vac. Sci. Technol. 8, 908–915 (1990)

    Article  Google Scholar 

  24. A.A. Ashrafi, A. Ueta, A. Avramescu, H. Kumano, I. Suemune, Y.-W. Ok, T.-Y. Seong, Growth and characterization of hypothetical zinc-blende ZnO films on GaAs (001) substrates with ZnS buffer layers. Appl. Phys. Lett. 76, 550–552 (2000)

    Article  Google Scholar 

Download references

Acknowledgements

This work is supported by National Natural Science Foundation of China Grant (Nos. 61205037, 61574063); Science and Technology Program of Guangdong Province, China (Grant Nos. 2016A040403106, 2017A050506047); Guangzhou Science and Technology Project (Grant No. 2016201604030047).

Author information

Authors and Affiliations

  1. Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou, 510631, People’s Republic of China

    H. Zhang, S. S. Yan, S. T. Li & S. C. Su

Authors
  1. H. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. S. Yan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. T. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. C. Su
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. C. Su.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Zhang, H., Yan, S.S., Li, S.T. et al. Band alignment of In2Se3 multilayers/ZnO heterojunction measured by X-ray photoelectron spectroscopy. J Mater Sci: Mater Electron 29, 6434–6438 (2018). https://doi.org/10.1007/s10854-018-8624-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-018-8624-0

Search

Navigation