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Memory switching of ZnGa2Te4 thin films

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Abstract

Electrical and switching property of amorphous defect chalcopyrite ZnGa2Te4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the as-deposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the as-deposited and the annealed films at t a ≤ 548 K have the amorphous phase, while that the annealed at t ≥ 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I–V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa2Te4 is good candidate in phase change memory device.

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References

  1. Ovshinsky SR (1968) Phys Rev Lett 2:1450

    Article  Google Scholar 

  2. Jun JH, Cho K, Yun J, Kim S (2011) J Mater Sci 46:6767. doi:10.1007/s10853-011-5633-2

    Article  CAS  Google Scholar 

  3. Lokesh R, Udayashankar NK, Asokan S (2010) J Non-Cryst Solids 356:321

    Article  CAS  Google Scholar 

  4. Ovshinsky SR, Fritzsche H (1971) Met Trans 2:641

    Article  CAS  Google Scholar 

  5. Al-Ghamdi AA, Nagat AT, Bahabri FS, Al-orainy RH, Al-harbi SR, Al-Hazmi FS (2009) J Alloys Compd 484:561

    Article  CAS  Google Scholar 

  6. Madhu BJ, Jayanna HS, Asokan S (2009) J Non-Cryst Solids 355:2630

    Article  CAS  Google Scholar 

  7. Slankamence MP, Lukic SR, Zivanov MB (2009) Semicond Sci Technol 24:085021

    Article  Google Scholar 

  8. Kozyukin SA, Popov AL, Voronkov EN (2010) Thin Solid Films 518:5656

    Article  Google Scholar 

  9. Papandreou N, Pantazi A, Sebastian A, Eleftheriou E, Breitwisch M, Lam C, Pozidis H (2010) Solid State Electron 54:991

    Article  CAS  Google Scholar 

  10. Serpi A, Zielinger P (1988) Phys Status Solidi A 108:351

    Article  CAS  Google Scholar 

  11. Rashmi, Dhawan U (2002) Powder Diffr 7:41

    Article  Google Scholar 

  12. Yahia IS, Fadel M, Sakr GB, Shenouda SS (2010) J Alloys Compd 507:551

    Article  CAS  Google Scholar 

  13. Fouad SS, Sakr GB, Yahia IS, Abdel Basset DM (2011) Mater Res Bull 46:2141

    Article  CAS  Google Scholar 

  14. Morocoima M, Quintero M, Guerrero E, Tovar R, Conflant P (1997) J Phys Chem Solids 58:503

    Article  CAS  Google Scholar 

  15. Tolansky S (1955) Introduction to Interferometry. Longman, London

    Google Scholar 

  16. Sedeek K, Fadel M (1993) Thin Solid Films 229:223

    Article  CAS  Google Scholar 

  17. Fadel M, Sedeek K, Abd-El-Salam F (1996) Thin Solid Films 283:239

    Article  CAS  Google Scholar 

  18. Afifi MA, Hegab NA, Atyia HE, Farid AS (2008) J. Alloys Comp. 463:10

    Article  CAS  Google Scholar 

  19. Mott NF, Davis EA (1971) Electronic process in Non-crystalline Materials. Calendon Press, Oxford

    Google Scholar 

  20. Mott NF, Davis EA (1970) Philos Mag 22:903

    Article  Google Scholar 

  21. Webb JB, Brodie DE (1974) Can J Phys 52:2240

    CAS  Google Scholar 

  22. Lim PK, Brodie DE (1977) Can J Phys 55:1512

    Article  CAS  Google Scholar 

  23. Shimakawa K, Inagaki Y, Arizum T (1972) Jpn J Appl Phys 12:1043

    Article  Google Scholar 

  24. Lelmini D, Zhang YG (2007) J Appl Phys 102:054517

    Article  Google Scholar 

  25. Redaelli A, Pirovano A, Benvenuti A, Lacaita AL (2008) J Appl Phys 103:111101

    Article  Google Scholar 

  26. Fadel M, Sedeek K, Hegab NA (2000) Vacuum 57:307

    Article  CAS  Google Scholar 

  27. Alegria A, Arruabarrena A, Sanz F (1983) J Non-Cryst Solids 58:17

    Article  CAS  Google Scholar 

  28. Prakash S, Asokan S, Ghare DB (1994) Semicond Sci Technol 9:1484

    Article  CAS  Google Scholar 

  29. Ovshinky SR, Fritzsche H (1973) IEEE Trans Elect Dev 20:91

    Article  Google Scholar 

  30. Chandasree Das, Mohan Rao G, Asokan S (2011) J Non-Cryst Solids 357:165

    Article  Google Scholar 

  31. Kaplan T, Alder D (1971) Appl Phys Lett 19:419

    Article  Google Scholar 

  32. Mott NF (1970) Philos Mag 22:7

    Article  CAS  Google Scholar 

  33. Shimakawa K, Inagaki Y, Arizumi T (1972) Jpn J Appl Phys 11:1319

    Article  CAS  Google Scholar 

  34. El-Mansy MK, El-Zidia MM, Abou El-Hassan E, Ammar AA (1994) Appl Phys Commun 13:187

    CAS  Google Scholar 

  35. Kotkata MF (1994) Thin Solid Films 240:143

    Article  CAS  Google Scholar 

  36. Abdel Aziz MM (2006) Appl Surf Sci 253:2059

    Article  CAS  Google Scholar 

  37. Mehra R, Shyam R, Mathur PC (1979) J Non-Cryst Solids 31:435

    Article  CAS  Google Scholar 

  38. Armitage D, Brodie DE, Eastman PC (1971) Can J Phys 49:1662

    Article  CAS  Google Scholar 

  39. Boer KW, Ovshinsky SR (1970) J Appl Phys 41:2675

    Article  CAS  Google Scholar 

  40. Fritzche H (1974) In: Tauc J (ed) Amorphous and liquid semiconductors. Plenum, London, p 313

    Chapter  Google Scholar 

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Authors and Affiliations

  1. Nano-Science Laboratory, Department of Physics, Faulty of Education, Ain Shams University, Roxy, Cairo, Egypt

    G. B. Sakr & I. S. Yahia

  2. Semiconductor Laboratory, Department of Physics, Faulty of Education, Ain Shams University, Roxy, Cairo, Egypt

    I. S. Yahia

  3. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia

    I. S. Yahia

  4. Department of Physics, Faulty of Education, Ain Shams University, Roxy, Cairo, Egypt

    S. S. Fouad & D. M. Abdel Basset

Authors
  1. G. B. Sakr
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  2. S. S. Fouad
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  3. I. S. Yahia
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  4. D. M. Abdel Basset
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Correspondence to I. S. Yahia.

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Sakr, G.B., Fouad, S.S., Yahia, I.S. et al. Memory switching of ZnGa2Te4 thin films. J Mater Sci 48, 1134–1140 (2013). https://doi.org/10.1007/s10853-012-6850-z

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  • DOI: https://doi.org/10.1007/s10853-012-6850-z

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