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Photosensors based on Ni-doped ZnO/p-Si junction prepared by sol-gel method

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Abstract

A high quality and adherent transparent layer of ZnO thin films were grown on p-type Si substrates to fabricate undoped and Ni-doped ZnO/p-Si heterojunction. The C Adj −V and G Adj −V plots of the diodes are significantly affected with the frequency and Ni-dopant contents. The interface state density (D it ) is changed with the frequency and Ni contents. The high value of ideality factor (n) is due to the interface states at the interface of the diode and the effect of barrier inhomogeneities or to the high value of R s . The transient photocurrent measurements were used to analyze the photoresponse of the diodes. The obtained results indicate that the diodes could be used as an optical sensor especially for the Ni-doped at 0.5 % ZnO/p-Si diode.

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Acknowledgment

This work is supported by NPST Program by King Saud University Project Number 10-NAN1197-02 and Fırat University Scientific Research Projects Unit Project number:FF.12.30

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Authors and Affiliations

  1. Maden Higher Vocational School, Firat University, Elazığ, Turkey

    M. Cavas

  2. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt

    A. A. M. Farag

  3. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia

    Z. A. Alahmed

  4. Department of Physics, Faculty of Science, Firat University, Elazig, 23169, Turkey

    F. Yakuphanoglu

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  1. M. Cavas
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  2. A. A. M. Farag
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  3. Z. A. Alahmed
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  4. F. Yakuphanoglu
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Correspondence to F. Yakuphanoglu.

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Cavas, M., Farag, A.A.M., Alahmed, Z.A. et al. Photosensors based on Ni-doped ZnO/p-Si junction prepared by sol-gel method. J Electroceram 31, 298–308 (2013). https://doi.org/10.1007/s10832-013-9839-3

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