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Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

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Abstract.

ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M \( {\rm\Omega}\) , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Firat University, Elazig, Turkey

    A. Merih Akyuzlu, Fethi Dagdelen & Fahrettin Yakuphanoglu

  2. Department of Chemistry, Faculty of Science, Inoni University, Malatya, Turkey

    Ahmet Gultek

  3. Department of Physics, Faculty of Science, AL Faisaliah Campus, King Abdulaziz University, 21589, Jeddah, Saudi Arabia

    A. A. Hendi

Authors
  1. A. Merih Akyuzlu
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  2. Fethi Dagdelen
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  3. Ahmet Gultek
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  4. A. A. Hendi
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  5. Fahrettin Yakuphanoglu
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Correspondence to Fethi Dagdelen.

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Merih Akyuzlu, A., Dagdelen, F., Gultek, A. et al. Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method. Eur. Phys. J. Plus 132, 178 (2017). https://doi.org/10.1140/epjp/i2017-11442-8

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  • DOI: https://doi.org/10.1140/epjp/i2017-11442-8

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