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Microbeam and Nanobeam Analysis

  • Conference proceedings
  • © 1996

Overview

Editors:
  1. Daniele Benoit

    1. Beauchamp, France

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  2. Jean-Francois Bresse

    1. Department PAP/CDP/CMT, C.N.E.T. France Telecom, Bagneux, France

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  3. Luc Van’t dack

    1. Department of Chemistry, University of Antwerp (UIA), Antwerp-Wilrijk, Belgium

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  4. Helmut Werner

    1. Waalre, The Netherlands

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  5. Johann Wernisch

    1. Institut für angewandte und technische Physik, Technische Universität, Wien, Austria

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Part of the book series: Mikrochimica Acta Supplementa (MIKROCHIMICA, volume 13)

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Table of contents (60 papers)

  1. Front Matter

    Pages I-XI
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  2. Invited Speakers

    1. Monte Carlo Simulation Techniques for Quantitative X-Ray Microanalysis

      • Ludwig Reimer
      Pages 1-12

    2. Transport Equation Approach to Electron Microbeam Analysis: Fundamentals and Applications

      • Wolfgang S. M. Werner
      Pages 13-38

    3. Use of Soft X-Rays in Microanalysis

      • Jean-Louis Pouchou
      Pages 39-60

    4. Intensity Measurement of Wavelength Dispersive X-Ray Emission Bands: Applications to the Soft X-Ray Region

      • G. Remond, C. Gilles, M. Fialin, O. Rouer, R. Marinenko, R. Myklebust et al.
      Pages 61-86

    5. Synchrotron Radiation Induced X-Ray Microfluorescence Analysis

      • K. Janssens, L. Vincze, B. Vekemans, A. Aerts, F. Adams, K. W. Jones et al.
      Pages 87-115

    6. Particle-Induced X-Ray Emission — A Quantitative Technique Suitable for Microanalysis

      • Klas G. Malmqvist
      Pages 117-133

    7. Cathodoluminescence Microscopy and Spectroscopy of Semiconductors and Wide Bandgap Insulating Materials

      • J. F. Bresse, G. Remond, B. Akamatsu
      Pages 135-166

    8. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

      • Patrick Bertrand, Weng Lu-Tao
      Pages 167-182

    9. Three-Dimensional Nanoanalysis with the Tomographic Atom-Probe

      • Didier Blavette, Annabelle Bigot, Cristelle Schmuck, Frédéric Danoix, Pierre Auger
      Pages 183-194

    10. Microanalysis at Atomic Resolution

      • Stephen J. Pennycook, David E. Jesson, Nigel D. Browning, Matthew F. Chisholm
      Pages 195-207

  3. Contributed Papers

    1. Composition of Vanadium Carbides Formed by Solidification in Fe-V-C-M Alloys: Influence of Additions (M = Al, Cu, Mo)

      • Leïla Adnane, Rafika Kesri, Sylvaine Hamar-Thibault
      Pages 209-216

    2. Electron Transmission Coefficient for Oblique Angle of Incidence

      • Michael Andrae, Peter Klein, Kurt Röhrbacher, Johann Wernisch
      Pages 217-224

    3. Depth Distribution Function for Oblique Angle of Incidence

      • Michael Andrae, Kurt Röhrbacher, Peter Klein, Johann Wernisch
      Pages 225-232

    4. Simulation of EDS Spectra Using X-RES Software

      • Mimoun Aouine, Claude Esnouf, Thierry Epicier
      Pages 233-240

    5. On the Use of the GeLα Line in Thin Film X-Ray Microanalysis of Si1-x Ge x /Si Heterostructures

      • Aldo Armigliato, Thomas Lewis, Rodolfo Rosa
      Pages 241-249

    6. Computer Simulations of the X-Ray Intensity Distribution from Submicron Particles Embedded in a Matrix

      • Alexander Berner, Igor Levin
      Pages 251-257

    7. Determination of Rare Earth Elements in Biological and Mineral Apatite by EPMA and LAMP-ICP-MS

      • Simon Chenery, Terry Williams, Tracey A. Elliott, Peter L. Forey, Lars Werdelin
      Pages 259-269

    8. Quantitative Analysis of the Compound Layer of Plasma Nitrided Pure Iron

      • Jan D’Haen, Marc D’Olieslaeger, Luc De Schepper, Lambert M. Stals
      Pages 271-277

    9. Correction of the Edge Effect in Auger Electron Microscopy

      • Luděk Frank, František Matějka
      Pages 279-287
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Keywords

Editors and Affiliations

  • Beauchamp, France

    Daniele Benoit

  • Department PAP/CDP/CMT, C.N.E.T. France Telecom, Bagneux, France

    Jean-Francois Bresse

  • Department of Chemistry, University of Antwerp (UIA), Antwerp-Wilrijk, Belgium

    Luc Van’t dack

  • Waalre, The Netherlands

    Helmut Werner

  • Institut für angewandte und technische Physik, Technische Universität, Wien, Austria

    Johann Wernisch

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