1. Introduction: Ion implantation technology special issue

   • Larry Larson
   • Susan Felch

   Introduction 23 February 2023 Pages: 1231 - 1233

2. 35 Years of challenge and innovation in ion implant

   • Anthony Renau

   Review 09 November 2022 Pages: 1234 - 1240

   

3. Where is the annealing technology going for better device performance?

   • Kyoichi Suguro

   Review 22 December 2022 Pages: 1241 - 1247

   

4. Development of ultra-high-current implanter for material modification process in next era devices

   • Hiroaki Kai
   • Yuya Uchida
   • Takeshi Matsumoto

   Original Paper 23 February 2023 Pages: 1248 - 1252

   

5. Particle counts and size distributions after implantation with on-wafer graphite sources

   • Michael I. Current
   • Hideto Fujibuchi
   • Greg Lucchesi

   Original Paper 28 December 2022 Pages: 1253 - 1256

   

6. High-temperature electrostatic chuck enabled by BN dielectrics

   • Wei Fan
   • Yuji Morikawa
   • Brian Kozak

   Original Paper 30 November 2022 Pages: 1257 - 1259

   

7. Comparison of annealing quality after 3e15/cm² 50 keV BF₂⁺ implant between rapid thermal annealing and furnace annealing

   • Leonhard Sturm-Rogon
   • Alexander Burenkov
   • Wilfried Lerch

   Original Paper Open access 05 December 2022 Pages: 1260 - 1264

   

8. The examination of source life and beam parameters of germanium implantation using hydrogen carrier gas

   • Weng Siong Chan
   • King Suen Lee
   • James Huang

   Original Paper 14 November 2022 Pages: 1265 - 1269

   

9. Thermal budget reduction for spike anneals in conventional RTP

   • S. Hamm
   • M. Bauer
   • A. Wansidler

   Original Paper 15 December 2022 Pages: 1270 - 1273

   

10. Parasitic side channel formation due to ion implantation isolation of GaN HEMT

    • Hao Yu
    • Uthayasankaran Peralagu
    • Nadine Collaert

    Original Paper 12 December 2022 Pages: 1274 - 1278

    

11. Angle control requirements and solutions for enabling high aspect ratio structures

    • James DeLuca
    • Cheongil Ryu
    • Edward Eisner

    Original Paper 05 December 2022 Pages: 1279 - 1284

    

12. Precise angle control for channeling using SS-UHE, a single-wafer ultrahigh-energy ion implanter

    • Hiroyuki Kariya
    • Sho Kawatsu
    • Mitsuaki Kabasawa

    Original Paper 09 January 2023 Pages: 1285 - 1288

    

13. New ECR source ion implanter with advanced wafer temperature control for material modification

    • Sarko Cherekdjian
    • Preston Barrows
    • Ross Radel

    Original Paper 11 November 2022 Pages: 1289 - 1294

    

14. Introducing the Purion H200™ single wafer high current implanter

    • A. Gupta
    • A. Ray
    • R. Rzeszut

    Original Paper 05 December 2022 Pages: 1295 - 1300

    

15. A snapshot review on flash lamp annealing of semiconductor materials

    • Lars Rebohle
    • S. Prucnal
    • S. Zhou

    Review Open access 02 December 2022 Pages: 1301 - 1309

    

16. Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealing

    • Angela Alvarez Alonso
    • Pablo Acosta Alba
    • Alain Claverie

    Original Paper 21 December 2022 Pages: 1310 - 1314

    

17. On continuum simulations of the evolution of faulted and perfect dislocation loops in silicon during post-implantation annealing

    • Anna Johnsson

    Original Paper Open access 17 January 2023 Pages: 1315 - 1320

    

18. Lateral mapping of damage patterns in plasma immersion ion-implanted silicon

    • O. Kéri
    • Á. Kerekes
    • Z. Zolnai

    Original Paper 28 November 2022 Pages: 1321 - 1325

    

19. Measuring activation depth profiles in very highly doped ultra-thin semiconductors at sub-nm depth resolution

    • Abhijeet Joshi
    • Bulent M. Basol

    Original Paper 05 January 2023 Pages: 1326 - 1330

    

20. The diffusion analysis of implanted heavy metals in 4H-SiC

    • Ryota Wada
    • Nariaki Hamamoto
    • Takashi Kuroi

    Original Paper 15 December 2022 Pages: 1331 - 1337

    

21. Comparative evaluation of indirectly heated cathode DC ion source and inductively coupled plasma RF ion source for high current ion implanter

    • Jongjin Hwang
    • Myoungsoo Choi
    • Ho-Jun Lee

    Original Paper 11 January 2023 Pages: 1338 - 1342

    

22. Risk of neutron generation with implantation of light ions

    • J. A. Turcaud
    • C. Heckman
    • J. Schuur

    Original Paper 03 November 2022 Pages: 1343 - 1346

    

23. Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si

    • F. Torregrosa
    • M. Canino
    • R. Nipoti

    Original Paper 15 December 2022 Pages: 1347 - 1352

    

24. Advanced process control method for inline isolation implant monitoring in III–V GaAs semiconductor fabrication

    • Sasha Kurkcuoglu
    • Shiban Tiku

    Original Paper 20 December 2022 Pages: 1353 - 1357

    

25. Single implant damage accumulation and interactions between multiple implants

    • J. DeLuca
    • G. Cai

    Original Paper 05 December 2022 Pages: 1358 - 1363

    

26. Defects and dopant behavior of a medium-dose range implant into heated silicon wafers

    • Tae-Hoon Huh
    • Akira Mineji
    • Yoji Kawasaki

    Original Paper 22 December 2022 Pages: 1364 - 1368

    

27. A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond

    • Hao Yu
    • Marc Schaekers
    • Nadine Collaert

    Review 21 November 2022 Pages: 1369 - 1379

    

28. Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis

    • John Borland
    • Shota Komago
    • Temel Buyuklimanli

    Original Paper 23 February 2023 Pages: 1380 - 1389

    

29. Nitride stress inversion using plasma immersion ion implantation processes

    • L. Lachal
    • C. Plantier
    • F. Mazen

    Original Paper 04 January 2023 Pages: 1390 - 1394

    

30. The performance of the fourth generation of safe delivery source® (SDS®4) package on AIBT iPulsar high current implanter

    • Ying Tang
    • Vito Nien
    • Brandon Ni

    Original Paper 27 December 2022 Pages: 1395 - 1397

    

31. Performance improvement on SMIT SHX-III high current ion implanter through the use of EnrichedPlus ⁷²germanium tetrafluoride (EnPlus ⁷²GeF₄) and hydrogen (H₂) mixture gases

    • Ying Tang
    • Vito Nien
    • Eric Tien

    Original Paper 21 November 2022 Pages: 1398 - 1400

    

32. Germanium ion implantation performance improvement on applied materials’ VIISta HCS high current implanter with use of germanium tetrafluoride (GeF₄) and hydrogen (H₂) mixture gases

    • Ying Tang
    • Chee Weng Leong
    • Eric Tien

    Original Paper 28 November 2022 Pages: 1401 - 1403

    

33. Investigation of source materials, co-gases, and methods for aluminum ion implantation

    • Ying Tang
    • Ed Jones
    • Joseph Sweeney

    Original Paper 08 December 2022 Pages: 1404 - 1406

    

34. Investigation of various source materials and co-gases for fluorine ion implantation performance improvement

    • Ying Tang
    • Joseph Despres
    • Joseph Sweeney

    Original Paper 21 November 2022 Pages: 1407 - 1409

    

35. Performance and reliability of the fourth generation of Safe Delivery Source® (SDS®4) in the ion implantation application

    • Weihang Guan
    • Ying Tang
    • Kavita Murthi

    Original Paper 07 December 2022 Pages: 1410 - 1417

    

36. Results and Adoption of Safe Delivery Source® (SDS®4) on VIISta® HCP

    • Barry Chambers
    • Douglas Newman
    • John Flood

    Original Paper 21 November 2022 Pages: 1418 - 1420

    

37. Improving safety in dopant gas delivery systems

    • Josep Arnó
    • Mitchell H. Weston

    Original Paper 10 February 2023 Pages: 1421 - 1425

    

38. Dopant gas purity and adsorbent stability

    • Josep Arnó
    • Omar K. Farha
    • Patrick E. Fuller

    Original Paper 02 December 2022 Pages: 1426 - 1430

    

39. Temperature effect in high-dose, medium-energy implantation with single-wafer-type implanter

    • Takuya Sakaguchi
    • Kazutaka Tsukahara
    • Yoji Kawasaki

    Original Paper 21 November 2022 Pages: 1431 - 1434

    

40. Enhancement of Al⁺ beam current in GSD III-180

    • Hiroki Murooka
    • Keiji Sakita
    • Hideo Tsurumi

    Original Paper 18 November 2022 Pages: 1435 - 1437

    

41. A study of beam divergence effects on medium-dose channeling implants

    • Tae-Hoon Huh
    • Akira Mineji
    • Yoji Kawasaki

    Original Paper 12 January 2023 Pages: 1438 - 1440

    

42. Ion erosion and elemental purity of deposited Si films on Al

    • Walt Wriggins
    • Matthew Wong
    • Michael I. Current

    Original Paper 02 February 2023 Pages: 1441 - 1444

    

43. Angle-directed ion beams for localized deposition on high aspect ratio structures

    • Thomas E. Seidel
    • Michael I. Current

    Original Paper 20 December 2022 Pages: 1445 - 1449

    

44. Ion erosion and particle release in fine graphite

    • Michael I. Current
    • Hideto Fujibuchi
    • Max Slaton

    Original Paper 20 December 2022 Pages: 1450 - 1453

    

45. Profiles and defects in highly channeled and random beam orientation MeV dopant implants in Si(100)

    • Michael I. Current
    • Yoji Kawasaki
    • Viktor Samu

    Original Paper 05 January 2023 Pages: 1454 - 1458

    

46. Individual dopant profiles in high energy multiple implantation under channeling conditions

    • Yoji Kawasaki
    • Takuya Sakaguchi
    • Haruka Sasaki

    Original Paper 08 November 2022 Pages: 1459 - 1462

    

47. Beam shape control system by machine learning on the NISSIN BeyEX medium current ion implanter

    • Shinya Takemura
    • Shigeki Sakai
    • Eiichi Murayama

    Original Paper 09 January 2023 Pages: 1463 - 1467

    

48. The scaled FinFET well formation using heated implantation

    • B. N. Guo
    • N. Pradhan
    • K. H. Shim

    Original Paper 19 December 2022 Pages: 1468 - 1471

    

49. Analysis of dopant distribution profiles of very high energy implants

    • Serguei Kondratenko
    • Leonard Rubin

    Original Paper 21 November 2022 Pages: 1472 - 1475

    

50. Neutron radiation due to high energy boron ion beams

    • Wilhelm Platow
    • Leonard Rubin
    • Steven Roberge

    Original Paper 15 November 2022 Pages: 1476 - 1481