Volume 28, Issue 1 | Journal of Materials Research

Search all Journal of Materials Research articles

Volume 28, Issue 1

January 2013

Focus Issue: Silicon Carbide — Materials, Processing and Devices

20 articles in this issue

Argon annealing procedure for producing an atomically terraced 4H–SiC (0001) substrate and subsequent graphene growth
Andrew J. Strudwick
Christopher H. Marrows
OriginalPaper 01 January 2013 Pages: 1 - 6
Comparative studies on total energetics of nonequivalent hexagonal polytypes for group IV semiconductors and group III nitrides
Koji Moriguchi
Kazuhito Kamei
Nobuhiro Okada
OriginalPaper 01 January 2013 Pages: 7 - 16
Conventional thermal annealing for a more efficient p-type doping of Al⁺ implanted 4H-SiC
Roberta Nipoti
Raffaele Scaburri
Antonella Parisini
OriginalPaper 01 January 2013 Pages: 17 - 22
Effect of growth gas flow rate on the SiC crystal resistivity
Shenghuang Lin
Zhiming Chen
OriginalPaper 01 January 2013 Pages: 23 - 27
Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H–SiC surface
John Rozen
Masahiro Nagano
Hidekazu Tsuchida
OriginalPaper 01 January 2013 Pages: 28 - 32
Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
Deepak Prasai
Wilfred John
Tilman Weiss
OriginalPaper 01 January 2013 Pages: 33 - 37
Effects of substrate crystallinity on the on-state resistance of 6H–SiC photoconductive switches
Wei Huang
Shao-Hui Chang
Er-Wei Shi
OriginalPaper 01 January 2013 Pages: 38 - 43
Preparation of small silicon carbide quantum dots by wet chemical etching
David Beke
Zsolt Szekrényes
Adam Gali
OriginalPaper 01 January 2013 Pages: 44 - 49
SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery
Rooban Venkatesh K.G. Thirumalai
Bharat Krishnan
Yaroslav Koshka
OriginalPaper 01 January 2013 Pages: 50 - 56
Size-, shape-, and orientation-dependent properties of SiC nanowires of selected bulk polytypes
Ming Yu
C.S. Jayanthi
S.Y. Wu
OriginalPaper 01 January 2013 Pages: 57 - 67
Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications
Elissa H. Williams
John A. Schreifels
Yaroslav Koshka
OriginalPaper 01 January 2013 Pages: 68 - 77
Assessment of cell proliferation on 6H–SiC biofunctionalized with self-assembled monolayers
A. Oliveros
C.L. Frewin
S.E. Saddow
OriginalPaper 01 January 2013 Pages: 78 - 86
High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
M. Cutroneo
P. Musumeci
L. Calcagno
OriginalPaper 01 January 2013 Pages: 87 - 93
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
Francesco La Via
Giuseppe D’Arrigo
Stephen E. Saddow
OriginalPaper 01 January 2013 Pages: 94 - 103
Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
Massimo Camarda
Ruggero Anzalone
Antonino La Magna
OriginalPaper 01 January 2013 Pages: 104 - 112
The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atmospheric pressure chemical vapor deposition
Biao Shi
Ming-Xing Zhu
Er-Wei Shi
OriginalPaper 01 January 2013 Pages: 113 - 119
A polycrystalline SiC-on-Si architecture for capacitive pressure sensing applications beyond 400 °C: Process development and device performance
Jiangang Du
Christian A. Zorman
OriginalPaper 01 January 2013 Pages: 120 - 128
Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
Ruggero Anzalone
Massimo Camarda
Francesco La Via
OriginalPaper 01 January 2013 Pages: 129 - 135
Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review
Jayaprakasam Selvakumar
Dakshinamoorthy Sathiyamoorthy
ReviewPaper 01 January 2013 Pages: 136 - 149
Introduction
Stephen E. Saddow
Yaroslav Koshka
Feng Zhao
OriginalPaper 01 January 2013 Pages: i - i