To Mark, or Not to Mark: What Really is the Message? Virginia M. Oversby Material Matters 01 February 1997 Pages: 5 - 7
GaN and Related Materials for Device Applications Stephen J. PeartonChihping Kuo GaN and Related Materials for Device Application 01 February 1997 Pages: 17 - 21
Reactive Molecular-Beam Epitaxy for Wurtzite GaN S. N. MohammadW. KimH. Morkoç GaN and Related Materials for Device Application 01 February 1997 Pages: 22 - 28
Blue-Green Light-Emitting Diodes and Violet Laser Diodes Shuji Nakamura GaN and Related Materials for Device Application 01 February 1997 Pages: 29 - 35
Implantation and Dry Etching of Group-III-Nitride Semiconductors J. C. ZolperR. J. Shul GaN and Related Materials for Device Application 01 February 1997 Pages: 36 - 43
GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors Michael S. ShurM. Asif Khan GaN and Related Materials for Device Application 01 February 1997 Pages: 44 - 50
Defects and Interfaces in GaN Epitaxy F. A. Ponce GaN and Related Materials for Device Application 01 February 1997 Pages: 51 - 57
ICAM’97/E-MRS’97 to Be Held in Strasbourg, France International Union of Materials Research Societies 01 February 1997 Pages: 58 - 58
Peercy to Give Plenary Speech on the Future of Semiconductor Materials Research MRS News 01 February 1997 Pages: 60 - 60
Abstracts of MRS Internet Journal of Nitride Semiconductor Research Abstracts 01 February 1997 Pages: 84 - 86
