This is a preview of subscription content, log in via an institution to check access.
References
S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64 (1994) p. 1687.
H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48 (1986) p. 353.
S.D. Lester, F.A. Ponce, M.G. Craford, and D.A. Steigerwald, Appl. Phys. Lett. 66 (1995) p. 1249.
S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) p. L1705.
J.S. Foresi and T.D. Moustakas, Appl. Phys. Lett. 22 (1969) p. 1433.
F.A. Ponce, D.P. Bour, W. Gotz, and P.J. Wright, Appl. Phys. Lett. 68 (1996) p. 57.
F.A. Ponce, J.S. Major Jr., W.E. Piano, and D.F. Welch, Appl. Phys. Lett. 65 (1994) p. 2303.
K.G. Fertitta, A.L. Holmes, F.J. Ciuba, R.D. Dupuis, and F.A. Ponce, J. Electron. Mater. 24 (1995) p. 257.
F.A. Ponce, B.S. Krusor, J.S. Major, W.E. Piano, and D.F. Welch, Appl. Phys. Lett. 67 (1995) p. 410.
F.A. Ponce, M.A. O’Keefe, and E.C. Nelson, Philos. Mag. A 55 (1996) p. 777.
F.A. Ponce, C.G. Van de Walle, and J.E. Northrup, Phys. Rev. B 53 (1996) p. 7473.
F.A. Ponce, D.P. Bour, W. Gotz, N.M. Johnson, H.I. Helava, I. Grzegory, J. Jun, and S. Porowski, Appl. Phys. Lett. 68 (1996) p. 917.
F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, and J.W. Steeds, Appl. Phys. Lett. 69 (1996) p. 337.
F.A. Ponce, D. Cherns, W.T. Young, and J.W. Steeds, Appl. Phys. Lett. 69 (1996) p. 770.
D. Cherns and A.R. Preston, Proc. 11th Int. Congress on Electron Microscopy (Japan Society of Electron Microscopy, Kyoto, 1986) p. 721.
F.A. Ponce, D. Cherns, W.T. Young, J.W. Steeds, and S. Nakamura (unpublished manuscript).
Rights and permissions
About this article
Cite this article
Ponce, F.A. Defects and Interfaces in GaN Epitaxy. MRS Bulletin 22, 51–57 (1997). https://doi.org/10.1557/S0883769400032577
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400032577