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GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

  • GaN and Related Materials for Device Application
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Shur, M.S., Khan, M.A. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors. MRS Bulletin 22, 44–50 (1997). https://doi.org/10.1557/S0883769400032565

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