Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In* M. LangG. PenslM. Uhrmacher OriginalPaper Pages: 95 - 101
Anomalous photoluminescence and raman scattering behavior in heavily Mg+ ion-implanted InP A. YamadaY. MakitaS. Uekusa OriginalPaper Pages: 102 - 108
Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5) T. SchweizerK. KöhlerP. Tasker OriginalPaper Pages: 109 - 113
Equation of state data for silicon-germanium alloys under pressures up to 42 GPa G. QueisserW. B. Holzapfel OriginalPaper Pages: 114 - 117
Time-resolved four-wave-mixing of exciton transitions in GaAs/AlGaAs quantum wells: Novel effects in the lineshape Karl Leo OriginalPaper Pages: 118 - 122
Transient photoluminescence decay study of minority carrier lifetime in GaAs heteroface solar cell structures A. EhrhardtW. WettlingA. Bett OriginalPaper Pages: 123 - 129
Role of free carriers in the application of optically detected magnetic resonance for studies of defects in silicon W. M. ChenB. Monemar OriginalPaper Pages: 130 - 135
Microstructure of annealed low-temperature-grown GaAs layers Z. Liliental-WeberA. ClaverieR. Calawa OriginalPaper Pages: 141 - 146
Microstructure and thermal stability of Fe, Ti, and Ag implanted yttria-stabilized zirconia B. A. van HasselA. J. Burggraaf Sarfaces And Multilayers Pages: 155 - 163
Electrical and optical properties of amorphous Te40As38Ge10Si12 thin films H. T. El-Shair Sarfaces And Multilayers Pages: 164 - 167
Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities P. I. GaidukA. Nylandsted Larsen Sarfaces And Multilayers Pages: 168 - 171
Electronic conduction properties of silver particles in cesium oxide Nan LiQuan-De Wu Sarfaces And Multilayers Pages: 172 - 178
Angular distributions of sputtered atoms for low-energy nitrogen irradiation of silicon D. BouchierA. Bosseboeuf Sarfaces And Multilayers Pages: 179 - 184