Abstract
Electrical, optical and structural, properties, of Te40As38Ge10Si10 thin films were studied. X-ray diffraction patterns indicate that these films are in an amorphous state. The dark electrical resistivity of Te40As38Ge10Si12 films was measured at room temperature and at elevated temperature. The thermal activation energy ΔE was determined. The optical constants (refractive index n and absorption index k) of such films were determined in the spectral range of 0.5–2.0 μm. The absorption coefficient (α) of this system was also determined using the known equation α=4πk/λ. The refractive index n has anomalous behaviour near the absorption edge. Analysis of the absorption spectrum reveals indirect optical transitions. The corresponding forbidden-band width was determined. Its value is approximately twice the thermal activation energy.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N.F. Mott, E.A. Davis: Electronic Processes in Noncrystalline Materials (Oxford University Press, Oxford 1971)
D. Adler. Amorphous Semiconductors (Butterworths, London 1972)
J. Tauc (ed.): Amorphous and Liquid Semiconductors (Plenum, New York 1974)
P.G. Lecomber, J. Mort (eds.): Electronic and Structural Properties of Amorphous Semiconductors (Academic, New York 1973)
D.L. Eaton: J. Am. Ceram. Soc. 47, 554 (1964)
S.R. Ovshinsky: Phys. Rev. Lett. 21, 1450 (1968)
K.W. Böer, S.R. Ovshinsky: J. Appl. Phys. 41, 2675 (1970)
N.P. Kalmykova, E.A. Smorgonskaya, V.Kh. Shpunt: Sov. Phys. Semicond. 21, 969 (1987)
N.P. Kalmykova, E.A. Smorgonskaya, V.Kh. Shpunt: J. Non-Cryst. Solids 90, 605 (1987)
T. Miyazono, T. Shiraishi, T. Kurosu, M. Iida: Elect. Eng. Japan 95, 14 (1975)
K. Homma, H.K. Henisch, S.R. Ovshinsky: J. Non-Cryst. Solids 35 & 36, 1105 (1980)
J. Bicerano, S.R. Ovshinsky: J. Non-Cryst. Solids 74 & 75 (1985)
S. Tolansky: Multiple-Beam Interferometry of Surface and Films (Oxford University Press, Oxford 1948) pp. 147–150
O.S. Heavens: In: Physics of Thin Films, ed. by G. Hass, R.E. Thun (Academic, New York 1964) Vol. 2, p. 193
L.N. Hadley: In: Physics of Thin Films, ed. by G. Hass, R.E. Thun (Academic, New York 1964) Vol. 2, p. 216
H.R. Riedl, R.B. Schoolar: Phys. Rev. 131, 2082 (1963)
G. Dionne, J.C. Wooley: Phys. Rev. B 6, 3898 (1972)
J.R. Lowney, S.D. Senturia: J. Appl. Phys. 47, 1771 (1976)
F. Stren: Phys. Rev. 133A, 1653 (1964)
K.V. Vyatkin, A.P. Shotov: Sov. Phys. Semicond. 14, 785 (1980)
T.S. Moss: Optical Properties of Semiconductors (Butterworths, London 1959) p. 17