Electrical properties at p-ZnSe/metal interfaces T. KawakamiY. KoideMasanori Murakami Regular Issue Paper Pages: 929 - 935
Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides Yuusuke TanakaAkira TanabeMasaki Hirose Regular Issue Paper Pages: 936 - 940
Phase coarsening and crack growth rate during thermo-mechanical cycling of 63Sn37Pb solder joints P. L. HackeY. FahmyH. Conrad Regular Issue Paper Pages: 941 - 947
Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors K. YasudaK. MoriT. Nimura Regular Issue Paper Pages: 948 - 953
Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability R. F. KopfR. A. HammF. Ren Regular Issue Paper Pages: 954 - 960
Phase equilibria, defect chemistry and semiconducting properties of CdTe(s)—Thermodynamic modeling Q. ChenM. HillertR. Schmid-Fetzer Regular Issue Paper Pages: 961 - 971
Plasma chemistries for dry etching of NiFe and NiFeCo K. B. JungJ. HongA. T. Hurst Jr. Regular Issue Paper Pages: 972 - 978
Stoichiometry-dependent deep levels in undoped p-type Al0.38Ga0.62As grown by liquid phase epitaxy Hiroshi WatanabeMitsutake MotozawaJun-Ichi Nishizawa Regular Issue Paper Pages: 979 - 984
The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode Haksoo HanHyunsoo ChungMinkyu Song Regular Issue Paper Pages: 985 - 989
Influence of surface contamination on metal/metal bond contact quality A. SchneuwlyP. GröningV. P. Jaecklin Regular Issue Paper Pages: 990 - 997
Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces T. KagawaYasuo KoideMasanori Murakami Regular Issue Paper Pages: 998 - 1002
A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers V. A. MishurnyiF. De AndaJ. Nieto-Navarro Regular Issue Paper Pages: 1003 - 1004
An optically addressed ZnO ultraviolet light modulator with 10:1 contrast M. WrabackH. ShenY. Lu Abstract Pages: 1005 - 1005
Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts C. R. BolognesiM. W. DvorakD. H. Chow Letter Pages: L54 - L57