A study of chemical beam epitaxy of GaAs using tris-dimethylaminoarsenic H. K. DongN. Y. LiW. C. Mitchel OriginalPaper Pages: 69 - 74
Selenium doping of GalnP by atomic layer epitaxy D. JungM. LeonardS. M. Bedair OriginalPaper Pages: 75 - 78
The thermal stability of ohmic contact to n-type InGaAs layer J. W. WuC. Y. ChangC. T. Lee OriginalPaper Pages: 79 - 82
Thermal stability of sputter-deposited ZnO thin films Y. SongE. S. KimA. Kapila OriginalPaper Pages: 83 - 86
Differential photo-voltage spectroscopy for characterizing epitaxial multilayered and quantum well structures S. Ahmad TabatabaeiAgis A. IliadisColin E.C. Wood OriginalPaper Pages: 87 - 92
Control of low fe content in the preparation of semi-insulating InP by wafer annealing D. WolfG. HirtG. Müller OriginalPaper Pages: 93 - 97
Photoluminescence and photoreflectance study of Si/Si0.91Ge0.09 andSi9/Ge6 quantum dots Y. S. TangC. M. Sotomayor TorresH. Kibbel OriginalPaper Pages: 99 - 106
Submicron nickel filaments made by electroplating carbon filaments as a new filler material for electromagnetic interference shielding Xiaoping ShuiD. D. L. Chung OriginalPaper Pages: 107 - 113