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The thermal stability of ohmic contact to n-type InGaAs layer

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Abstract

The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450°C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au. A new phase of Au4ln appears after annealing at 300°C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of (Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450°C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of (Ti/Pt/Au)-InGaAs ohmic contact is better than that of (Ni/Ge/Au)InGaAs ohmic contact.

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Authors and Affiliations

  1. Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, Republic of China

    J. W. Wu, C. Y. Chang & K. C. Lin

  2. Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China

    E. Y. Chang & J. S. Chen

  3. Institute of Optical Sciences, National Central University, Chung-Li, Taiwan, Republic of China

    C. T. Lee

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  1. J. W. Wu
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  2. C. Y. Chang
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  3. K. C. Lin
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  4. E. Y. Chang
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  6. C. T. Lee
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Wu, J.W., Chang, C.Y., Lin, K.C. et al. The thermal stability of ohmic contact to n-type InGaAs layer. J. Electron. Mater. 24, 79–82 (1995). https://doi.org/10.1007/BF02659625

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  • DOI: https://doi.org/10.1007/BF02659625

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