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Photoluminescence and photoreflectance study of Si/Si0.91Ge0.09 andSi9/Ge6 quantum dots

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Abstract

Nanometer-scale quantum dots based on a series of Si/Si0.91Ge0.09 strained layer superlattices and a Si9/Ge6 strain-symmetrized superlattice were fabricated using electron beam lithography and reactive ion etching. They were investigated by photoluminescence and photoreflectance. It was found for the first time that the quantum efficiency of optical emission from the quantum well layers increased by over two orders of magnitude when the quantum dot sizes were reduced to ≤100 nm.

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Authors and Affiliations

  1. Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, G12 8QQ, Glasgow, UK

    Y. S. Tang & C. M. Sotomayor Torres (Royal Society of Edinburgh Research Fellow)

  2. Department of Physics, University of Warwick, CV4 7AL, Coventry, UK

    R. A. Kubiak, T. E. Whall & E. H. C. Parker

  3. Daimler Benz AG, Research Center, Wilhelm-Runge-Strasse 11, 89081, Ulm, Germany

    H. Presting & H. Kibbel

Authors
  1. Y. S. Tang
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  2. C. M. Sotomayor Torres
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  3. R. A. Kubiak
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  4. T. E. Whall
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  5. E. H. C. Parker
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  6. H. Presting
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  7. H. Kibbel
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Tang, Y.S., Sotomayor Torres, C.M., Kubiak, R.A. et al. Photoluminescence and photoreflectance study of Si/Si0.91Ge0.09 andSi9/Ge6 quantum dots. J. Electron. Mater. 24, 99–106 (1995). https://doi.org/10.1007/BF02659629

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  • DOI: https://doi.org/10.1007/BF02659629

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