Molecular beam epitaxial growth of carbon doped GaAs with elemental gallium and arsenic sources and a CCI4 gas source G. J. SullivanM. K. SzwedR. W. Grant OriginalPaper Pages: 1 - 4
Crystallographic orientation dependence of the growth rate for GaAs low pressure organometallic vapor phase epitaxy S. H. JonesL. S. SalinasK. Mayer OriginalPaper Pages: 5 - 14
Electron irradiation induced defects and schottky diode characteristics for metalorganic vapor phase epitaxy and molecular beam epitaxial n-GaAs G. H. YousefiJ. B. WebbS. M. Khanna OriginalPaper Pages: 15 - 20
Evidence of a thermally stable carbon-nitrogen deep level in carbon-doped, nitrogen-implanted, GaAs and AIGaAs J. C. ZolperM. E. SherwinR. P. Schneider OriginalPaper Pages: 21 - 24
Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine Ming Y. JowBang Y. MaaP. Daniel Dapkus OriginalPaper Pages: 25 - 29
A study of the transition from high to low resistivity in As-grown GaAs MBE material C. E. StutzD. C. LookP. W. Yu OriginalPaper Pages: 31 - 34
Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs film H. FathollahnejadR. RajeshR. W. Carpenter OriginalPaper Pages: 35 - 38
Solder joint reliability of indium-alloy interconnection Kozo ShimizuTeru NakanishiKoichi Niwa OriginalPaper Pages: 39 - 45
Improving the electrical conductivity of composites comprised of short conducting fibers in a nonconducting matrix: The addition of a nonconducting particulate filler Pu-Woei ChenD. D. L. Chung OriginalPaper Pages: 47 - 51
Surface reaction and stability of parylene N and F thin films at elevated temperatures P. K. WuG. -R. YangT. -M. Lu OriginalPaper Pages: 53 - 58
Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe Jaime M. MartinS. GarcĂaG. Gonzalez-Diaz OriginalPaper Pages: 59 - 67