Abstract
This work discusses the transition from high resistivity as-grown GaAs layers to thermally metastable low resistivity as-grown layers by molecular beam epitaxy. This transition occurs at about 430°C and coincides with a reflective high energy electron diffraction reconstruction change from a 2 × 1 to 2 × 4 pattern for an As4/Ga beam equivalent pressure ratio of 20. For growth temperatures in the range 350 to 430°C, room temperature Hall-effect measurements have shown resistivities of <107 ohm-cm and photoluminescence has shown new peaks at 0.747 eV and a band from 0.708 to 0.716 eV at 4.2K, in unannealed material.
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Stutz, C.E., Look, D.C., Taylor, E.N. et al. A study of the transition from high to low resistivity in As-grown GaAs MBE material. J. Electron. Mater. 24, 31–34 (1995). https://doi.org/10.1007/BF02659723
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DOI: https://doi.org/10.1007/BF02659723