Skip to main content
SpringerLink
Log in

Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

We report the results of GaAs grown by vacuum atomic layer epitaxy using trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) as the group III and V sources. The growth rate saturates at one monolayer per cycle for a wide range of growth parameters. The temperature window for monolayer growth is as wide as 70°C. All the films are p-type with the carrier concentration depending on the exposure conditions of TMGa and TBAs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Nishizawa, H. Abe and T. Kurabayashi,J. Electrochem. Soc. 132, 1197 (1985).

    Article  CAS  Google Scholar 

  2. S.P. DenBaars, P.D. Dapkus, C.A. Beyler, A. Hariz and K M. Dzurko,J. Cryst. Growth 93, 195 (1988).

    Article  CAS  Google Scholar 

  3. T. Takanohashi, K. Mochizuki and M. Ozeki,Proc. Gallium Arsenide and Related Coumponds, Inst. Phys. Conf. Ser. No 106 Karuizawa, Japan, 1989, p. 39.

  4. M. Ozeki, N. Ohtsuka, Y. Sakuma and K. Kodama,J. Cryst. Growth 107, 102 (1991).

    Article  CAS  Google Scholar 

  5. A. Usui, H. Sunakawa, F.J. Stutzler and K. Ishida,Appl. Phys. Lett. 56, 289 (1990).

    Article  CAS  Google Scholar 

  6. Y. Ide, B.T. McDermott, M. Hashemi and S.M. Bedair,Appl. Phys. Lett. 53, 2314 (1988).

    Article  CAS  Google Scholar 

  7. E. Colas, R. Bhat and B.J. Skromme,Appl. Phys. Lett. 55, 2769 (1989).

    Article  CAS  Google Scholar 

  8. K. Mori, M. Yoshida, A. Usui and H. Terao,Appl. Phys. Lett. 52, 27 (1988).

    Article  CAS  Google Scholar 

  9. T.H. Chiu, J.E. Cunningham, A. Robertson, Jr. and D.L. Malm,J. Cryst. Growth 105, 155 (1990).

    Article  CAS  Google Scholar 

  10. K. Fujii, I. Suemune, T. Koui and M. Yamanishi,Appl. Phys. Lett. 60, 1498 (1992).

    Article  CAS  Google Scholar 

  11. B.Y. Maa and P.D. Dapkus,Thin Solid Films 225, 12 (1993).

    Article  CAS  Google Scholar 

  12. J.Y. Tsao, T.M. Brennan and B.E. Hammons,Appl. Phys. Lett. 53, 288 (1988).

    Article  CAS  Google Scholar 

  13. K. Mochizuki, M. Ozeki, K. Kodama and N. Ohtsuka,J. Cryst. Growth 93, 557 (1988).

    Article  CAS  Google Scholar 

  14. M. Gotoda, S. Maruno, Y. Morishita, Y. Nomura, H. Ogata, K. Kuramoto and H. Kuroki,J. Cryst. Growth 100, 5 (1990).

    Article  CAS  Google Scholar 

  15. L.Q. Liu, B.B. Huang, H.W. Ren and M.H. Jiang,J. Cryst. Growth 115, 83 (1991).

    Article  CAS  Google Scholar 

  16. J R. Creighton and B.A. Bansenauer,J. Vac. Sci. Technol. All, 876 (1993).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Materials Science and Electrical Engineering, University of Southern California, 90089, Los Angeles, CA

    Ming Y. Jow, Bang Y. Maa, Takashi Morishita & P. Daniel Dapkus

  2. Central Laboratory, ASAHI Chemical Industry Co. Ltd., 2-1 Samajima, Fuji City, 416, Sizuoka, Japan

    Takashi Morishita

Authors
  1. Ming Y. Jow
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Bang Y. Maa
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Takashi Morishita
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. Daniel Dapkus
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Jow, M.Y., Maa, B.Y., Morishita, T. et al. Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine. J. Electron. Mater. 24, 25–29 (1995). https://doi.org/10.1007/BF02659722

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02659722

Key words

Search

Navigation