Wafer bonding technology for silicon-on-lnsulator applications: A review Kiyoshi MitaniUlrich M. Gösele OriginalPaper Pages: 669 - 676
Effects of radiative processing steps on inversion layer mobility and channel hot carrier damage in reoxidized nitrided oxide mosfets Gregory DunnJohn Krick OriginalPaper Pages: 677 - 681
Numerical analysis of silicon-on-lnsulator short channel effects in a radiation environment J. H. SmithR. LawrenceG. J. Campisi OriginalPaper Pages: 683 - 687
A comparison of reactor and accelerator sources for neutron effects testing Samuel Wilensky OriginalPaper Pages: 689 - 691
A framework for understanding fast-neutron induced defects in SiO2 MOS structures W. Chang OriginalPaper Pages: 693 - 699
Fast neutron radiation damage effects on high resistivity silicon junction detectors Zheng LiH. W. Kraner OriginalPaper Pages: 701 - 705
Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons Hisayoshi ItohMasahito YoshikawaSadafumi Yoshida OriginalPaper Pages: 707 - 710
Electrical characterization of defects created in the Si-SiO2 system by ionizing radiation Edward H. Nicollian OriginalPaper Pages: 721 - 729
Analysis of persistent photoconductivity due to potential barriers Jeremiah R. LowneySantos Mayo OriginalPaper Pages: 731 - 736
Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors Artur BalasinskiWenliang ChenTso-Ping Ma OriginalPaper Pages: 737 - 743
Recombination-induced random walk diffusion of interstitial carbon in silicon A. R. FredericksonA. S. Karakashian OriginalPaper Pages: 745 - 752
X-ray lithography induced radiation damage in CMOS and bipolar devices L. K. Wang OriginalPaper Pages: 753 - 756
Radiation damage effects on bipolar and MOS devices in X-Ray lithography L. C. HsiaT. Christensen OriginalPaper Pages: 757 - 761
Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence David L. Griscom OriginalPaper Pages: 763 - 767
Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices C. C. H. HsuL. K. WangA. Acovic OriginalPaper Pages: 769 - 773