The xerogel structure of thermally evaporated tungsten oxide layers P. SchlotterL. Pickelmann OriginalPaper Pages: 207 - 236
Interpretation of hall and resistivity measurements in polycrystalline silicon A. K. GhoshA. RoseD. J. Eustace OriginalPaper Pages: 237 - 260
Electrically conducting poly(para-phenylene sulfide) prepared by doping with nitrosyl salts from solution Michael RubnerPeter CukorWalter Deits OriginalPaper Pages: 261 - 272
Study of grown-in defects and effect of thermal annealing in Al0.3Ga0.7As and GaAs LPE layers Sheng S. LiC. Y. LinJ. A. Hutchby OriginalPaper Pages: 273 - 287
Crystallization investigation of NiSi2 thin films M. MäenpääL. S. HungW. F. Tseng OriginalPaper Pages: 289 - 301
Cw laser crystallization of glow discharge a-Si:H on glass substrates I. D. CalderK. L. KavanaghR. Groleau OriginalPaper Pages: 303 - 320
Deep level studies of oxygen doped GaAs-Au Schottky barrier diodes P. S. NayarClaude M. Penchina OriginalPaper Pages: 321 - 333
On the calibration of solid state gas sensors Gulu N. AdvaniLeonard Nanis OriginalPaper Pages: 335 - 340
Investigations on long-living destriau-type electroluminescent phosphors Willi Lehmann OriginalPaper Pages: 341 - 354
Oxidation of titanium disilicide on polycrystalline silicon Jiann-Ruey ChenYuen-Chung LiuSheng-Deh Chu OriginalPaper Pages: 355 - 389
Heat dissipation from silicon chips in a vertical plate, elevated pressure cold wall system A. ReismanM. BerkenblitA. K. Ray OriginalPaper Pages: 391 - 411
The microstructure of laterally seeded silicon-on-oxide R. F. PinizzottoH. W. LamB. L. Vaandrager OriginalPaper Pages: 413 - 434
Optical quality GaInAs grown by molecular beam epitaxy G. WicksC. E. C. WoodL. F. Eastman OriginalPaper Pages: 435 - 440