Abstract
Recrystallizations of ion-irradiated single crystalline and polycrystalline NiSi2 films are investigated. In the single crystalline case, the irradiated surface portion of the NiSi2 film reorders epitaxially in a layer-by-layer manner, initiating from the remaining undamaged single crystalline NiSi2 seed near the NiSi2/Si interface. The irradiated polycrystal-line NiSi2 layer recrystallizes via growth from a fixed number of existing nuclei in the layer. In both cases, the recrystallization occurs with a relatively high velocity at very low temperatures (~ 100°C) and the activation energy of the growth rate is similar (1.2 to 1.4 eV). These results reflect the metallic bonding nature of NiSi2 and the fact that nucleation and mass transport are not required for growth from an amorphous mixture with a stoichiometric atomic composition and existing nuclei.
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References
S. S. Lau and N. W. Cheung, Thin Solid Films71, 117 (1980).
B. Y. Tsaur and M. Mäenpää, California Institute of Technology, 1980, unpublished results.
G. A. Hutchins and A. Shepala, Thin Solid Films18, 343 (1973).
H. Ishiwara, ‘Characterization of Epitaxial Silicide Films’, in J. E. E. Baglin and J. M. Poate (eds.), Proceedings of the Symposium on Thin Film Interfaces and Interactions, Vol. 80–2, The Electrochemical Society, Princeton, 1980, 159–170.
M. von Allmen, S. S. Lau, M. Mäenpää, and B. Y. Tsaur, Appl. Phys. Lett.37, 84 (1980).
See, for example, S. S. Lau, J. W. Mayer, and W. F. Tseng, ‘Solid Phase Epitaxial Growth of Si and Ge’, in S. P. Keller (ed.), Handbook on Semiconductors, Vol. 3, North-Holland, Amsterdam, 1980, Chapter 8, 531–562.
S. S. Lau and M. Mäenpää, California Institute of Technology, 1980, unpublished results.
M. Mäenpää, L. S. Hung, M-A. Nicolet, D. K. Sadana, and S. S. Lau, ‘Epitaxial Reordering of Ion-Irradiated NiSi2 Layers’, Thin Solid Films, to be published.
K. Hikosaka, H. Ishiwara, and S. Furakawa, Radiation Effects51, 253 (1980).
P. Revesz, M. Wittmer, J. Roth, and J. W. Mayer, J. Appl. Phys.49, 5199 (1978).
S. Mader and A. S. Nowick, Acta. Metall.15, 215 (1967).
J. W. Cristian, The Theory of Transformations in Metals and Alloys, Part 1, Equilibrium and General Kinetic Theory, 2nd ed., Pergamon Press, Oxford, 1965, Chapter 12, 525–548.
K. Gamo, T. Inada, J. W. Mayer, F. H. Eisen, and C. G. Rhodes, Radiation Effects33, 85 (1977).
M. G. Grimaldi, B. M. Paine, M-A. Nicolet, and D. K. Sadana, J. Appl. Phys.52, 4038 (1981).
S. S. Kular, B. J. Sealy, K. G. Stephens, D. K. Sadana, and G. R. Booker, Solid State Electron.23, 831 (1980).
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Mäenpää, M., Hung, L.S., Tsaur, B.Y. et al. Crystallization investigation of NiSi2 thin films. J. Electron. Mater. 11, 289–301 (1982). https://doi.org/10.1007/BF02654673
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DOI: https://doi.org/10.1007/BF02654673