Electrical Breakdown in Pure n- and p-Si V. F. BannayaE. V. Nikitina Electronic Properties of Semiconductors 12 March 2018 Pages: 273 - 277
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals N. K. MorozovaB. N. Miroshnikov Electronic Properties of Semiconductors 12 March 2018 Pages: 278 - 281
Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System N. A. BorshchS. I. Kurganskii Electronic Properties of Semiconductors 12 March 2018 Pages: 282 - 286
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands V. V. SobolevD. A. Perevoshchikov Electronic Properties of Semiconductors 12 March 2018 Pages: 287 - 293
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity V. A. RomakaP. -F. RoglD. Kaczorowski Electronic Properties of Semiconductors 12 March 2018 Pages: 294 - 304
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals S. V. PlyatskoL. V. Rashkovetskyi Electronic Properties of Semiconductors 12 March 2018 Pages: 305 - 309
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers V. V. KozlovskiA. E. Vasil’evA. A. Lebedev Electronic Properties of Semiconductors 12 March 2018 Pages: 310 - 315
Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles Yu. A. ZharovaV. A. TolmachevS. I. Pavlov Surfaces, Interfaces, and Thin Films 12 March 2018 Pages: 316 - 319
Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films A. A. TikhiiYu. M. NikolaenkoI. V. Zhikharev Surfaces, Interfaces, and Thin Films 12 March 2018 Pages: 320 - 323
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface A. S. Lenshin Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 March 2018 Pages: 324 - 330
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon D. I. BilenkoO. Ya. BelobrovayaI. T. Yagudin Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 March 2018 Pages: 331 - 334
Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations S. Yu. Davydov Carbon Systems 12 March 2018 Pages: 335 - 340
Optimal Doping of Diode Current Interrupters A. S. Kyuregyan Physics of Semiconductor Devices 12 March 2018 Pages: 341 - 347
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model V. I. AltukhovA. V. SankinS. V. Filippova Physics of Semiconductor Devices 12 March 2018 Pages: 348 - 351
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films V. A. SmirnovA. D. MokrushinYu. A. Dobrovolskii Physics of Semiconductor Devices 12 March 2018 Pages: 352 - 358
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities F. I. Manyakhin Physics of Semiconductor Devices 12 March 2018 Pages: 359 - 365
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE V. P. KhvostikovS. V. SorokinaM. Z. Shvarts Physics of Semiconductor Devices 12 March 2018 Pages: 366 - 370
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules A. V. AndreevaN. Yu. DavidyukA. V. Chekalin Physics of Semiconductor Devices 12 March 2018 Pages: 371 - 375
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures G. B. GalievE. A. KlimovP. P. Maltsev Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 376 - 382
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization V. F. AgekyanE. V. BorisovN. G. Filosofov Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 383 - 389
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands M. Yu. EsinA. I. NikiforovO. P. Pchelyakov Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 390 - 393
Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte E. V. AstrovaN. E. PreobrazhenskiyS. I. Pavlov Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 394 - 410