Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current A. F. PopkovN. E. KulaginK. A. Zvezdin BASIC RESEARCH 29 January 2019 Pages: 1909 - 1914
Electron Transport by a Transverse Acoustoelectric Stoneley Wave A. K. MorochaA. S. Rozhkov BASIC RESEARCH 29 January 2019 Pages: 1915 - 1918
Predicting the Optical Properties of Matrix Composites Containing Spherical Inclusions with Metal Shells I. V. Lavrov BASIC RESEARCH 29 January 2019 Pages: 1919 - 1924
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells E. N. Vigdorovich BASIC RESEARCH 29 January 2019 Pages: 1925 - 1930
Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means D. A. UsanovA. E. PostelgaK. A. Gurov BASIC RESEARCH 29 January 2019 Pages: 1931 - 1935
Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube–Nickel Oxide Composite Electrode Material A. V. AlekseyevE. A. LebedevD. G. Gromov ELECTRONICS MATERIALS 29 January 2019 Pages: 1936 - 1941
Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling I. M. BelovaA. G. BelovA. P. Lysenko ELECTRONICS MATERIALS 29 January 2019 Pages: 1942 - 1946
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers M. V. RevinA. P. KotkovB. G. Gribov ELECTRONICS MATERIALS 29 January 2019 Pages: 1947 - 1952
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition A. V. NovakV. R. NovakE. E. Gusev TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1953 - 1957
Using Combined Optical Techniques to Control the Shallow Etching Process A. D. VolokhovskiyN. N. GerasimenkoD. S. Petrakov TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1958 - 1962
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating Hang Thi NguyenA. O. YakubovS. A. Kozyukhin TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1963 - 1968
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures V. I. EgorkinV. E. ZemlyakovV. I. Garmash TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1969 - 1972
A Physical Model of an SOI Field-Effect Hall Sensor M. A. KorolevM. I. PavlyukS. S. Devlikanova ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1973 - 1975
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests V. A. SergeevI. V. FrolovO. A. Radaev ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1976 - 1981
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy Iu. A. Iusipova ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1982 - 1988
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures S. V. GudinaYu. G. ArapovA. N. Vinichenko Erratum 29 January 2019 Pages: 1989 - 1989