1. Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current

   • A. N. Akimov
   • A. E. Klimov
   • V. S. Epov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1505 - 1510

   

2. Formation of a Graphene-Like SiN Layer on the Surface Si(111)

   • V. G. Mansurov
   • Yu. G. Galitsyn
   • Béla Pécz

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1511 - 1517

   

3. Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation

   • M. M. Venediktov
   • E. A. Tarasova
   • A. G. Fefelov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1518 - 1524

   

4. Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy

   • A. P. Gorshkov
   • N. S. Volkova
   • S. B. Levichev

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1525 - 1528

   

5. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

   • A. M. Mizerov
   • S. N. Timoshnev
   • A. D. Bouravleuv

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1529 - 1533

   

6. Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection

   • O. V. Polischuk
   • D. V. Fateev
   • V. V. Popov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1534 - 1539

   

7. Behavioral Features of MIS Memristors with a Si₃N₄ Nanolayer Fabricated on a Conductive Si Substrate

   • S. V. Tikhov
   • O. N. Gorshkov
   • P. Dimitrakis

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1540 - 1546

   

8. On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

   • N. V. Baidus
   • V. Ya. Aleshkin
   • D. V. Yurasov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1547 - 1550

   

9. Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

   • S. V. Gudina
   • Yu. G. Arapov
   • A. N. Vinichenko

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1551 - 1558

   

10. Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering

    • I. V. Erofeeva
    • M. V. Dorokhin
    • V. E. Kotomina

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1559 - 1563

    

11. Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates

    • I. V. Samartsev
    • S. M. Nekorkin
    • A. B. Chigineva

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1564 - 1567

    

12. Solar Cell Based on Core/Shell Nanowires

    • N. V. Sibirev
    • K. P. Kotlyar
    • G. E. Cirlin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1568 - 1572

    

13. On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation

    • V. V. Tsyplenkov
    • V. N. Shastin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1573 - 1580

    

14. Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field

    • V. A. Sablikov
    • Yu. Ya. Tkach

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1581 - 1585

    

15. Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

    • K. E. Spirin
    • D. M. Gaponova
    • S. A. Dvoretsky

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1586 - 1589

    

16. Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

    • K. V. Maremyanin
    • A. V. Ikonnikov
    • V. I. Gavrilenko

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1590 - 1594

    

17. All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating

    • I. S. Shashkin
    • O. S. Soboleva
    • N. A. Pikhtin

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 07 November 2018 Pages: 1595 - 1602

    

18. Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers

    • V. V. Mamutin
    • N. D. Ilyinskaya
    • A. V. Lyutetskiy

    SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 07 November 2018 Pages: 1603 - 1606

    

19. Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe

    • S. A. Fefelov
    • L. P. Kazakova
    • K. D. Tsendin

    AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 07 November 2018 Pages: 1607 - 1610

    

20. Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates

    • P. A. Alekseev
    • M. S. Dunaevskiy
    • G. E. Cirlin

    MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 07 November 2018 Pages: 1611 - 1615

    

21. Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface

    • N. V. Agrinskaya
    • A. A. Lebedev
    • E. Lahderanta

    CARBON SYSTEMS 07 November 2018 Pages: 1616 - 1620

    

22. Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

    • L. V. Asryan
    • F. I. Zubov
    • A. E. Zhukov

    PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1621 - 1629

    

23. Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p⁺–n₀–n⁺ Diodes

    • P. A. Ivanov
    • T. P. Samsonova
    • A. S. Potapov

    PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1630 - 1634

    

24. Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects

    • V. V. Kozlovski
    • A. A. Lebedev
    • Yu. V. Lyubimova

    PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1635 - 1637

    

25. Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation

    • A. S. Ilin
    • A. N. Matsukatova
    • Yu. Vygranenko

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 07 November 2018 Pages: 1638 - 1641