Abstract
The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
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ACKNOWLEDGMENTS
The study was supported by the Russian Foundation for Basic Research, project no. 16-32-60060mol_a_dk.
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Translated by E. Smorgonskaya
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Ilin, A.S., Matsukatova, A.N., Forsh, P.A. et al. Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation. Semiconductors 52, 1638–1641 (2018). https://doi.org/10.1134/S1063782618120114
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DOI: https://doi.org/10.1134/S1063782618120114