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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.

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ACKNOWLEDGMENTS

This study was supported by the Russian Science Foundation, project no. 14-12-00644.

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Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    N. V. Baidus, S. M. Nekorkin, A. V. Rykov & D. G. Reunov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod , Russia

    V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasilnik, K. E. Kudryavtsev, A. V. Novikov, M. V. Shaleev, P. A. Yunin & D. V. Yurasov

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  1. N. V. Baidus
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  2. V. Ya. Aleshkin
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  3. A. A. Dubinov
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  4. Z. F. Krasilnik
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  5. K. E. Kudryavtsev
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  6. S. M. Nekorkin
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  7. A. V. Novikov
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  8. A. V. Rykov
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  9. D. G. Reunov
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  10. M. V. Shaleev
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  11. P. A. Yunin
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  12. D. V. Yurasov
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Corresponding authors

Correspondence to N. V. Baidus, V. Ya. Aleshkin or A. A. Dubinov.

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Translated by N. Korovin

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Baidus, N.V., Aleshkin, V.Y., Dubinov, A.A. et al. On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates. Semiconductors 52, 1547–1550 (2018). https://doi.org/10.1134/S1063782618120060

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  • DOI: https://doi.org/10.1134/S1063782618120060

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