Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current A. N. AkimovA. E. KlimovV. S. Epov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1505 - 1510
Formation of a Graphene-Like SiN Layer on the Surface Si(111) V. G. MansurovYu. G. GalitsynBéla Pécz XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1511 - 1517
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation M. M. VenediktovE. A. TarasovaA. G. Fefelov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1518 - 1524
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy A. P. GorshkovN. S. VolkovaS. B. Levichev XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1525 - 1528
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy A. M. MizerovS. N. TimoshnevA. D. Bouravleuv XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1529 - 1533
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection O. V. PolischukD. V. FateevV. V. Popov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1534 - 1539
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate S. V. TikhovO. N. GorshkovP. Dimitrakis XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1540 - 1546
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates N. V. BaidusV. Ya. AleshkinD. V. Yurasov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1547 - 1550
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures S. V. GudinaYu. G. ArapovA. N. Vinichenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1551 - 1558
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering I. V. ErofeevaM. V. DorokhinV. E. Kotomina XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1559 - 1563
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates I. V. SamartsevS. M. NekorkinA. B. Chigineva XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1564 - 1567
Solar Cell Based on Core/Shell Nanowires N. V. SibirevK. P. KotlyarG. E. Cirlin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1568 - 1572
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation V. V. TsyplenkovV. N. Shastin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1573 - 1580
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field V. A. SablikovYu. Ya. Tkach XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1581 - 1585
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures K. E. SpirinD. M. GaponovaS. A. Dvoretsky XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1586 - 1589
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors K. V. MaremyaninA. V. IkonnikovV. I. Gavrilenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 07 November 2018 Pages: 1590 - 1594
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating I. S. ShashkinO. S. SobolevaN. A. Pikhtin SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 07 November 2018 Pages: 1595 - 1602
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers V. V. MamutinN. D. IlyinskayaA. V. Lyutetskiy SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 07 November 2018 Pages: 1603 - 1606
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe S. A. FefelovL. P. KazakovaK. D. Tsendin AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 07 November 2018 Pages: 1607 - 1610
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates P. A. AlekseevM. S. DunaevskiyG. E. Cirlin MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 07 November 2018 Pages: 1611 - 1615
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface N. V. AgrinskayaA. A. LebedevE. Lahderanta CARBON SYSTEMS 07 November 2018 Pages: 1616 - 1620
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers L. V. AsryanF. I. ZubovA. E. Zhukov PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1621 - 1629
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes P. A. IvanovT. P. SamsonovaA. S. Potapov PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1630 - 1634
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects V. V. KozlovskiA. A. LebedevYu. V. Lyubimova PHYSICS OF SEMICONDUCTOR DEVICES 07 November 2018 Pages: 1635 - 1637
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation A. S. IlinA. N. MatsukatovaYu. Vygranenko FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 07 November 2018 Pages: 1638 - 1641