Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers D. V. KozlovV. V. RumyantsevV. I. Gavrilenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1369 - 1374
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells V. V. RumyantsevN. S. KulikovV. I. Gavrilenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1375 - 1379
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz R. A. KhabibullinN. V. ShchavrukV. I. Gavrilenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1380 - 1385
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T L. S. BovkunK. V. MaremyaninV. I. Gavrilenko XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1386 - 1391
Spinodal Decomposition in InSb/AlAs Heterostructures D. S. AbramkinA. K. BakarovT. S. Shamirzaev XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1392 - 1397
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures I. L. KalentyevaO. V. VikhrovaI. N. Antonov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1398 - 1402
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase S. V. GudinaA. S. BogolyubskiiM. V. Yakunin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1403 - 1406
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation A. S. PuzanovS. V. ObolenskiyV. A. Kozlov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1407 - 1411
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire P. A. YuninYu. N. DrozdovV. A. Grigoryev XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1412 - 1415
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon G. E. CirlinR. R. ReznikN. V. Kryzhanovskaya XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1416 - 1419
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region K. M. MorozovK. A. IvanovM. A. Kaliteevski XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1420 - 1423
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure O. A. NovodvorskyV. A. MikhalevskyK. I. Maslakov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1424 - 1427
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer R. R. ReznikK. P. KotlyarG. E. Cirlin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1428 - 1431
Study of the Structural and Morphological Properties of HPHT Diamond Substrates P. A. YuninP. V. VolkovV. I. Shashkin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1432 - 1436
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots I. A. DerebezovV. A. GaislerS. Reitzenstein XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1437 - 1441
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics A. V. NovikovD. V. YurasovA. I. Mashin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1442 - 1447
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices D. G. PavelyevA. P. VasilevE. S. Obolenskaya XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1448 - 1456
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface S. A. RudinZh. V. SmaginaA. V. Dvurechenskii XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1457 - 1461
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides A. E. ZhukovN. Yu. GordeevM. V. Maximov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1462 - 1467
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells A. A. DobretsovaZ. D. KvonN. N. Mikhailov XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1468 - 1472
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma A. I. OkhapkinP. A. YuninV. I. Shashkin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1473 - 1476
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation A. V. KhananovaS. V. Obolensky XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1477 - 1483
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates D. S. AbramkinM. O. PetrushkovT. S. Shamirzaev XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1484 - 1490
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut Yu. N. DrozdovO. I. KhrikinP. A. Yunin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1491 - 1494
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates K. E. KudryatvsevA. A. DubinovZ. F. Krasilnik XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1495 - 1499
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond N. A. Bekin XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1500 - 1504