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Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

A method for calculating the states of multivalent donors and acceptors in Hg1 –xCdxTe materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg1 –xCdxTe films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg1 –xCdxTe films.

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ACKNOWLEDGMENTS

This study was supported by the Russian Science Foundation, project no. 17-12-01360.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev & V. I. Gavrilenko

  2. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov & V. I. Gavrilenko

  3. Institut für Physik, Humboldt-Universität zu Berlin, 12489, Berlin, Germany

    H.-W. Hübers

Authors
  1. D. V. Kozlov
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  2. V. V. Rumyantsev
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  3. S. V. Morozov
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  4. A. M. Kadykov
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  5. M. A. Fadeev
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  6. H.-W. Hübers
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  7. V. I. Gavrilenko
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Correspondence to D. V. Kozlov.

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Translated by N. Korovin

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Kozlov, D.V., Rumyantsev, V.V., Morozov, S.V. et al. Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers. Semiconductors 52, 1369–1374 (2018). https://doi.org/10.1134/S1063782618110131

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  • DOI: https://doi.org/10.1134/S1063782618110131

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