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Semiconductors

, Volume 52, Issue 11, pp 1407–1411 | Cite as

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

  • A. S. PuzanovEmail author
  • S. V. Obolenskiy
  • V. A. Kozlov
XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Abstract

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.

Notes

ACKNOWLEDGMENTS

This study was supported by the Russian Foundation for Basic Research, project no. 15-02-07935 and programs of the Russian Academy of Sciences.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. S. Puzanov
    • 1
    Email author
  • S. V. Obolenskiy
    • 1
  • V. A. Kozlov
    • 1
    • 2
  1. 1.Lobachevsky State University of Nizhny NovgorodNizhny NovgorodRussia
  2. 2.Institute for Physics of Microstructures, Russian Academy of SciencesNizhny NovgorodRussia

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